- Paper published in Small Structures as a front cover article, an international applied science journal

- Development of a flexible neuromorphic memory device expected to be applied to wearable and bionic AI systems

The University of Seoul announced that a joint research team led by Professors Yoon Kim and Dong-Wook Park of the School of Electrical and Computer Engineering and the Center for Semiconductor Research at the Graduate Institute of Engineering has successfully developed a flexible organic-based resistive random-access memory (RRAM) device incorporating a graphene diffusion barrier, thereby securing high-reliability memory technology for next-generation flexible neuromorphic systems.

The research findings were published on June 3, 2025, in Small Structures (Impact Factor: 13.9, JCR top 6.9%) as a front cover, a world-class journal published by Wiley, under the title “Flexible and Reliable Parylene-C Resistive Random Access Memory Array with Graphene Barrier for Neuromorphic Systems.”

To address the issue of reduced reliability caused by the overgrowth of conductive filaments in flexible cation-based RRAM devices, the research team introduced a graphene diffusion barrier between the resistive switching layer (Parylene-C) and the inert electrode (Pt). This approach effectively suppressed excessive metal ion diffusion, resulting in approximately a ninefold improvement in durability compared to conventional organic-based devices, and the team confirmed that the device could maintain a stable resistance state even after more than 10,000 operating cycles.

▶ Flexible Parylene-C-based RRAM device, Current–voltage characteristics after introduction of graphene barrier, Front cover image

The team implemented the RRAM devices in a crossbar array structure that enables integration at the array level and demonstrated their suitability for neuromorphic computing applications through artificial neural network simulations using the Modified National Institute of Standards and Technology (MNIST) database.

Professors Kim and Park, co-corresponding authors of the study, commented, “In this study, we newly applied the method of introducing a graphene barrier layer between the resistive switching layer and the inert electrode to address the reliability issues of flexible organic-based memory devices. We expect this approach to contribute to securing stable memory technology required for various applications such as wearable and bionic devices.”

The study was co-authored by Seonjeong Lee and Sookyeong Kim, researchers in the School of Electrical and Computer Engineering at the University of Seoul. It was supported by the Institute of Information & Communications Technology Planning & Evaluation’s (IITP’s) University ICT Research Center Project funded by the Ministry of Science and ICT, the National Research Foundation of Korea’s (NRF’s) System Semiconductor Convergence Expert Development Project and Global Fundamental Research Laboratory Support Project, the Korea Industrial Technology Agency’s (KIAT’s) Industrial Innovation Talent Growth Support Project funded by the Ministry of Trade, Industry and Energy, and the research infrastructure of the University of Seoul’s Semiconductor Research Center.

Meanwhile, the University of Seoul’s Center for Semiconductor Research recently opened the “UOS Fab,” marking the start of its efforts to become an advanced hub for semiconductor convergence research. The center has built a cleanroom-based research infrastructure capable of supporting the entire semiconductor R&D cycle—from design to fabrication and analysis. It also provides hands-on training for university and high school students, as well as customized industry–academia projects for companies, to foster practical talent and establish itself as a base for technological innovation in Korea’s semiconductor industry.

▶ Seonjeong Lee, Sookyeong Kim, Professors Dong-Wook Park, Professors Yoon Kim