Ahn, Doyeol
Professor
Information & Technology Building # 226
+82-2-6490-5388
dahn@uos.ac.kr
Doyeol Ahn is a WB Distinguished Professor of Quantum Electronics in Electrical & Computer Engineering at the University of Seoul. Before joining UOS in 1996, Professor Kim served as Chief Scientist at LG Corporate Research Center. He received an B. S.(with Magna Cum Laude) in Electronic Engineering and his MS in Electronic Engineering from Seoul National University in 1983 and 1985, respectively and Ph.D. in Electrical Engineering from University of Illinois at Urbana-Champaign in 1988.
Professor Ahn has more than 35 years of experience in semiconductor physics, optoelectronic devices and quantum information communication. Recently, he is also conducting research on matamaterials especially, the invisibility cloaking, One ofhis early papers on strained layer quantum well lasers published in IEEEJournal of Quantum Electronics in 1988 became a classic in this field, whichhas more than several hundred citations. He isalso regarded as one of the pioneers in relativistic quantum informationscience in the arena of both special and general relativistic aspect of quantuminformation. He holds 36 US patents, published a textbook entitled, “Engineering Quantum Mechanics,” from Wiley (2011), three book chapters and coauthored more than 200 refereed SCI journal papers. In 2005, Professor Ahn was elected to the IEEE Fellow for his contribution in the theory of semiconductor quantum-well lasers and the development of quantum information communication research. in 2009, he also became an American Physical Socienty Fellow.
Professor Ahn has more than 35 years of experience in semiconductor physics, optoelectronic devices and quantum information communication. Recently, he is also conducting research on matamaterials especially, the invisibility cloaking, One ofhis early papers on strained layer quantum well lasers published in IEEEJournal of Quantum Electronics in 1988 became a classic in this field, whichhas more than several hundred citations. He isalso regarded as one of the pioneers in relativistic quantum informationscience in the arena of both special and general relativistic aspect of quantuminformation. He holds 36 US patents, published a textbook entitled, “Engineering Quantum Mechanics,” from Wiley (2011), three book chapters and coauthored more than 200 refereed SCI journal papers. In 2005, Professor Ahn was elected to the IEEE Fellow for his contribution in the theory of semiconductor quantum-well lasers and the development of quantum information communication research. in 2009, he also became an American Physical Socienty Fellow.
Education
Ph.D., Electrical Engineering, University of Illinois at Urbana-Champaign (1988)
M.S., Electronic Engineering, Seoul National University (1985)
B.S., Electronic Engineering, Seoul National University (1983, With Magna Cum Laude)
Academic Appointments
2008 - present, WB Distinguished Professor of Quantum Electronics, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
2003 - present, Professor, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
1998 - 2003, Associate Professor, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
1996 - 1998, Assistant Professor, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
Professional Appointments
1992 – 1996, Chief Scientist, LG Corporate Research Center
1989 – 1992, Assistant Professor, Department of Electrical and Electronic Engineering, POSTECH
1988 – 1989, Researcher, IBM Thomas Watson Research Center
Ph.D., Electrical Engineering, University of Illinois at Urbana-Champaign (1988)
M.S., Electronic Engineering, Seoul National University (1985)
B.S., Electronic Engineering, Seoul National University (1983, With Magna Cum Laude)
Academic Appointments
2008 - present, WB Distinguished Professor of Quantum Electronics, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
2003 - present, Professor, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
1998 - 2003, Associate Professor, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
1996 - 1998, Assistant Professor, Department of Electrical & Computer Engineering, College of Engineering, University of Seoul
Professional Appointments
1992 – 1996, Chief Scientist, LG Corporate Research Center
1989 – 1992, Assistant Professor, Department of Electrical and Electronic Engineering, POSTECH
1988 – 1989, Researcher, IBM Thomas Watson Research Center
PUBLICATIONS
1. D. Ahn, "Theoretical aspects ofblue-green II-VI strained quantum well lasers,"
PhysicaB (invited paper), vol. 191, pp. 140-155, 1993.
2. D. Ahn and S. L. Chuang, "Thetheory of strained-layer quantum welllasers with
band-gaprenormalization," IEEE J. Quantum Electronics (invited paper),vol.30, pp.350-365,
1994.
3. D. Ahn, “Theory of non-Markovian opticalgain in semiconductor quantum-well lasers,”
Prog. Quantum Electron. (invited paper),vol. 21, pp. 249-287, 1997.
4. H. S. Min and D. Ahn, "Langevin noise sources for theBoltzmann transport equations with
the relaxation-time approximation innondegenerate semiconductors,"J. Appl. Phys., vol. 58,
pp. 2262-2265, 1985.
5. D. Ahn and S. L. Chuang, "Variationalcalculation of subbands in a quantum well with
electric field: Gram-Schmidt orthogonalizationapproach," Appl. Phys. Lett., vol. 49, pp.
1450-1452, 1986.
6. D. Ahn and S. L. Chuang, "Exactcalculations of quasi-bound states of an isolated quantum
well with uniform electric field:quantum-well Stark resonance," Phys. Rev. B, vol. 34, pp.
9034-9037, 1986.
7. D. Ahn and S. L. Chuang,"Intersubband optical absorption in a quantum well with an applied
electric field," Phys. Rev. B, vol.35, pp.4149-4151, 1987.
8. D. Ahn and S. L. Chuang,"Nonlinear intersubband optical absorption in a semi-conductor
quantum well," J. Appl. Phys., vol.62, pp. 3052-3055, 1987.
9. D. Ahn and S. L. Chuang, "Calculationof linear and nonlinear intersubband optical
absorption in a quantum well model withan applied electric field," IEEE J. Quantum
Electron., vol. QE-23, pp. 2196-2204,1987.
10. D. Ahn and S. L. Chuang, "The electric-field dependence of intrasubbandpolar optical
phonon scattering in a quantumwell," Phys. Rev. B, vol. 37, pp. 2529-2535,1988.
11. D. Ahn and S. L. Chuang, "Electric-field dependence of the intersubbandoptical absorption in
a semiconductor quantum well,"Superlattices and Microstructures, vol. 4, pp. 153-157, 1988.
12. D. Ahn and S. L. Chuang, "A field effect quantum-well laser with lateralcurrent injection," J.
Appl. Phys., vol. 64, pp. 440-442, 1988.
13. D. Ahn and S. L. Chuang, and Y.-C. Chang, "Valence band mixing effects onthe quantum-
well laser gain and refractive indexchange," J. Appl. Phys., vol. 64,pp. 4056-4064, 1988.
14. D. Ahn and S. L. Chuang, "Optical gain in a strained-layer quantum-welllaser," IEEE J.
Quantum Electron., vol. QE-24, pp.2400-2406, 1988.
15. D. Ahn and S. L. Chuang, "Model of the field-effect quantum-well laserwith free carrier
screening and valence band mixing,"J. Appl. Phys., vol. 64, pp. 6143-6149, 1988.
16. L. Tsang, D. Ahn, and S. L. Chuang, "Electric fieldcontrol of second harmonic generation in
a quantum well," Appl. Phys. Lett.,vol. 59, pp. 697-699, 1988.
17. S. L. Chuang and D. Ahn, "Opticaltransitions in a parabolic quantum well with an electric
field- Analytic solutions, "J.Appl. Phys., vol. 65, pp. 2822-2826, 1989.
18. D. Ahn, "Collision broadening of optical gain in semiconductorlasers," J. Appl. Phys. vol. 65,
pp. 4517-4520, 1989.
19. D. Ahn, "Enhancement of Stark effect in coupled quantum wells for opticalswitching
devices," IEEE J. Quantum Electron.,vol. QE-25, pp. 2260-2265, 1989.
20. D. Ahn and S. L. Chuang, "Optical gain and gain suppression ofquantum-well lasers with
valence band mixing," IEEE J.Quantum Electron., vol. QE-26, pp. 13-24, 1990.
21. D. Ahn, "Theory of polar-optical-phonon scattering in a semiconductor quantumwire," J. Appl.
Phys., vol 69, pp. 3596-3600, 1991.
22. D. Ahn, T.-K. Yoo, E. Mendez, and S. L. Chuang, "Optical gain controlmodel of the quantum-
well laser diode," J. Appl. Phys.,vol. 70, pp.5246-5253, 1991.
23. D. Ahn, T.-K. Yoo, and H. Y. Lee, "Optical gain of the CdZnSe-ZnSequantum-well laser," Appl.
Phys. Lett., vol. 59, pp. 2669-2671,1991.
24. D. Ahn and T. K. Yoo, "Theoretical analysis of strained-layer InGaAs /GaAs quantum-well-lasers
with gain-suppression and valence bandmixing," Appl. Phys. Lett., vol. 60, pp. 548-550, 1992.
25. D. Ahn and T.-K. Yoo,"II-VI strained quantum well for a room-temperatureblue-green laser,"
J. Korean Phys. Soc., vol. 25, pp. 45-51,1992.
26. D. Ahn, and T.-K. Yoo, "Gain switching in coupled quantum wells,"Jpn. J. Appl. Phys., vol. 31,
pp. 1055-1058, 1992.
27. D. Ahn, T. K. Yoo and S. L. Chuang,"Strained II-VI quantum wells forapplications in room-
temperature blue-green laser," Jpn.J. Appl. Phys.,vol. 31, pp. L556-L559,1992.
28. D. Ahn, "Theory of phonon-limited mobility in a delta-doped quantumwell," Appl. Phys. Lett.,
vol. 61, pp.1567-1569, 1992.
29. D. Ahn and T. K. Yoo,"Envelope function calculation of linear andnonlinear optical gains in
strained-layer quantum wells," IEEEJ. Quantum Electron., vol. 29, pp. 2864-2872, 1993.
30. D. Ahn, "Intersubband transitions in a delta-doped semiconductor with anapplied electric field-
exact solutions," Phys. Rev. B,vol. 48, pp. 7981-7985, 1993.
31. G. Zhang, M. Pessa, and D. Ahn, "Gain characteristics of strained-layerInGaAs/GaAs quantum
well lasers," Phys. Stat. Sol. (b),vol. 176, 00. K75-K79, 1993.
32. D. Ahn, "Band-gap renormalization in strained-layer quantum wells withmulti-subband valence-
band mixing effects," J. KoreanPhys. Soc.,vol. 27, pp. 70-75, 1994.
33. D. Ahn, "Thefirst order correction to phonon scattering due to dynamical screening inquantum wells," Phys. Rev. B, vol.50, pp. 1713-1716, 1994.
34. D. Ahn, "Time-convolutionless reduced density operator theory of anarbitrary driven system
coupled to the stochastic reservoir:Quantum kinetic equations for semiconductors." Phys. Rev. B,
vol.50, pp. 8310 - 8318, 1994.
35. D. Ahn, “Qualitativeestimation of optical gain in wide-band-gap semiconductor quantum wells,” J.Appl. Phys., vol. 76, pp. 8206-8208, 1994.
36. D. Ahn and S. C. Choi, “Band-gap renormalization effects on 980 nmstrained-layer InGaAs /
AlGaAs quantum-well lasers,” J. Appl.Phys., vol. 76, pp. 7648-7650, 1994.
37. D. Ahn, "Time-convolutionless reduced density operator theory of anarbitrary driven system
coupled to the stochastic reservoir. II:Optical gain and line shape function for a driven
semiconductors." Phys. Rev. B, vol.51, pp.2159 - 2166, 1995.
38. D. Ahn, “Theoretical study of strained InGaP quantum-well lasers,” Appl. Phys.Lett., vol. 66,
pp. 628-630 (1995).
39. D. Ahn and S. J. Yoon, “On the effects of spin-orbit coupling on the opticalgain of strained
layer quantum wells,” J. Korean Phys.Soc., vol. 28, pp. 145-151, 1995.
40. D. Ahn, “Time-convolutionless non-Markovian quantum kinetics of drivensemiconductors ,”
J. Korean Phys. Soc.(invited paper),vol. 28, pp. S318-S326, 1995.
41. D. Ahn, “The theory of non-Markovian optical gain in semiconductor lasers,”IEEE J. Selected
Topics in Quantum Electron., vol. 1, pp.301-307, 1995.
42. D. Ahn, S. J. Yoon, S. L. Chuang, and C. S. Chang, “On the theory of optical gainin strained-
layer quantum wells within the 6x6Luttinger-Kohn model,” J. Appl. Phys., vol. 78, pp. 2489-
2497, 1995.
43. D. Ahn, “Calculations of hole-phonon scattering in strained-layer quantumwells,” J. Appl. Phys.,
vol. 78, pp. 4505-4509, 1995.
44. D. Ahn, “Band-structure engineering of a cubic GaN quantum-well laser,”Photonic Technol.
Lett., vol. 8, pp. 194-196, 1996.
45. D. Ahn, "Optical gain of a quantum-well laser with non-Markovianrelaxation and many-body
effects," IEEE J. Quantum Electron.,vol. 32, pp. 960-965, 1996.
46. D. Ahn,"Optical gain of InGaP and cubic GaN quantum-well lasers with verystrong spin-orbit-
coupling," J. Appl. Phys., vol. 79,pp. 7731-7737, 1996.
47. D. Ahn, "Non-Markovian gain of a quantum-well laser with many-bodyeffects," Appl. Phys.
Lett., vol.79, pp. 2498 - 2500, 1996.
48. D. Ahn, "On the theory optical gain of strained-layer hexagonal and cubicGaN quantum-well
lasers, "Jap. J. Appl. Phys., vol.35, pp. 6079 - 6083, 1996.
49. D. Ahn and S.-H. Park, "Optical gain of strained hexagonal and cubic GaNquantum-well
lasers," Appl. Phys. Lett., vol. 69,pp. 3303-3305, 1996.
50. S. J. Yoon and D. Ahn, "An analyticapproach to calculate the valence-band structure of
quantum wells with spin-orbit-couplingeffects," J. Korean Phys. Soc., vol. 29, pp. 88-93, 1996.
51. S.-H. Park and D. Ahn, "Screeningeffects on the band-gap renormalization of strained
InGaAs/InGaAsP quantum well lasers latticedmatched to GaAs", Appl. Phys. Lett., vol. 68,
pp. 1844-1846, 1996.
52. S.-H. Park and D. Ahn, "Opticalgain calculation of strained quantum-well lasers by the Fourier
expansion method," Jap. J. Appl.Phys., vol. 35, pp. 5740 -5744, 1996.
53. S.-H. Park and D. Ahn, "Theoreticalpredictions of optical gain in strained GaN/AlLnN quantum-
well lasers," Journal Korean Phys.Soc., vol. 30, pp. 345-348, 1997.
54. S.-H. Park and D. Ahn, "Optical gaincalculation of strained hexagonal and cubic GaN / AlGaN
quantum-well lasers," J. KoreanPhys. Soc., vol. 30, pp. 661-664, 1997.
55. S. H. Park and D. Ahn,"Many-body effects on optical gain in strained hexagonal and cubic
GaN/AlGaN quantum-well lasers,"Appl. Phys. Lett., vol. 71, pp. 398-400,1997.
56. D. Ahn, "Theory of non-Markoviangain in strained-layer quantum-well lasers with many-body
effects," IEEE J. QuantumElectron., vol. 34, pp. 344-352, 1998.
57. D. Ahn, S.-H. Park, and T. I. Kim,"Non-Markovian gain of strained-layer wurtzite GaN
quantum-well lasers withmany-body effects," IEEE J. Selected Topics in Quantum Electron.,
vol. 4, pp. 520-526, 1998.
58. C. K. Hyon, S. C. Choi, S. W. Hwang, D. Ahn, Yong Kim, and E. K. Kim,"Direct nanometer-
scale patterning by the cantileveroscillation of an atomic force microscope" Appl. Phys. Lett.,
vol. 75, No. 2, pp. 292-294,1999.
59. Y. S. Yu, S. W. Hwang, and D. Ahn, "Macromodelingof Single-Electron Transistor for
Efficient Circuit Simulation",IEEE Tran. Elec. Dev., vol. 46, No. 8,pp. 1667-1671, 1999.
60. S.-H. Park and D. Ahn, "Intrabandrelaxation time in wurtzite GaN/InAlN quantum well," Jpn.
J. Appl. Phys., vol. 38, pp. L815-L818,1999.
61. S.-H. Park, S. L. Chuang, and D. Ahn,"Piezoelectric effects on many-body optical gain of zinc-
blende and wurtzite GaN/AlGaNquantum-well lasers," Appl. Phys. Lett., vol. 75, pp. 1354-
1356, 1999.
62. S. K. Jung, C. K. Hyun, J. H. Park, S. W.Hwang, D. Ahn, M. H. Son, B. D. Min, Y. Kim, and
E. K. Kim, "Fabrication andelectrical characterization of planar resonant tunneling devices
incorporating InAs self-assembledquantum dotes," Appl. Phys. Lett.,vol. 75, pp.. 1167-1169,
1999.
63. C. K. Hyun, S. C. Choi, S. W. Hwang, D. Ahn,Y. Kim, and E. K. Kim, "Nanostructure
patterning and manipulation using atapping mode atomic force microscope," J. Korean Phys.
Soc., vol. 35, pp. S987-S990, 1999.
64. Y. S. Yu, Y. I. Jung, J. H. Park, S. W. Hwang, and D. Ahn,"Simulation of Single-Electron
CMOS hybrid circuits using SPICE macro-modeling", J. Korean Phys.Soc., vol. 35, pp. S991-
S994, 1999.
65. C. K. Hyun, S. C. Choi, S. W. Hwang, D. Ahn,Y. Kim, and E. K. Kim, "Nanostructure
fabrication and manipulation by thecantilever oscillationof an atomic force microscope,"
Jpn. J. Appl. Phys., vol. 38, pp.12B-29:31, 1999.
66. D. Ahn, J. H. Oh, K.Kimm, and S. W. Hwang,"Time-convolutionless reduced-density-operator
theory of a noisy quantum channel:two-bit quantum gate for quantum information processing,"
Phys. Rev. A, vol. 61, pp.052310-1:9,2000.
67. S.-H. Park, S. L. Chuang, J. Minch, and D.Ahn, "Intraband relaxation time effects on non-
Markovian gain with many-body effectsand comparison with experiment," Semicond.Sci.
Technol. Vol. 15, pp. 1-6, 2000.
68. K. H. Kim, H. J. Chung, S. H. Yoon, S. W.Hwang, J. W. Park, S. W. Kim, J. Choi, and D. Ahn,
"Full software analysis andimpedance matching of radio frequency CMOS integrated circuits,"
IEEE transations on Componets andPackaging Technol., vol. 23, pp. 183-189, 2000.
69. S.-H. Park, Y.-T. Lee, and D. Ahn,"Spontaneous polarization and piezoelectric effects on
intraband relaxation time in wurtziteGaN/AlGaN quantum-well," Appl. Phys. A, vol. 71,
pp.589-592 ,2000.
70. S.-H. Park, D. Ahn, Y.-T. Lee,"Screening effects on electron-LO-phonon intersubband
scattering in wide quantum well andcomparison with experiment," Jpn. J. Appl. Phys., Vol. 38
No. 12A, pp. 6601-6605, 2000.
71. J. H. Oh, D. Ahn, S. W. Hwang,"Optically driven qubits in artificial molecule," Phys. Rev. A,
vol. 62, pp. 052306-1;9, 2000.
72. K. Kimm, H.-J. Lee, D. Ahn, and S. W. Hwang,"Dynamical suppression of Decoherence in
quantum registers," J. Korean. Phys.Soc., vol. 37, pp. 496-502, 2000.
73. W. Y. Hwang, H.-J. Lee, D. Ahn, and S. W.Hwang, "Efficient schemes for reducing imperfect
collective decoherences," Phys.Rev. A, vol. 62, p. 062305, 2000.
74. C. K. Hyon, S. C. Choi,S.-H. Song, S. W. Hwang, M. H. son, D. Ahn, Y. J. Park, and E. K.
Kim, “Application ofatomic-force-microscope direct pattering to selective positioning of InAs
quantum dots on GaAs,”Appl. Phys. Lett., Vol. 77, No. 16, pp.2607-2609, Oct., 2000.
75. S. K. Jung, S. W. Hwang, D. Ahn, J. H. Park, Yong Kim, and E. K. Kim, “Fabricationof quantum
dot transistors incorporating a single self-assembled quantum dot, “PhysicaE., Vol. 7 No. 3-4, pp.
430-434, May 2000.
76. W. Y. Hwang, D. Ahn, and S. W. Hwang, "Correlated errors in quantumerror corrections,"
Phys. Rev. A, vol. 63, p. 022303, 2001.
77. B. H. Choi, C. M. Park,S-H. Song, M. H. Son, S. W. Hwang, D. Ahn, and E. K. Kim,
“Selective growth ofInAs self-assembled quantum-dots on nanopatterned SiO2/Sisubstrate,”
Appl. Phys. Lett., Vol.78, No. 10, pp.1403-1405, Mar., 2001.
78. C. K. Hyon, S. C. Choi,S.-H. Song, S. W. Hwang, B D. Min, D. Ahn, Y. J. Park, and E. K. Kim,
“Selectivepositioning of InAs quantum dots on a GaAs substrate directly patterned byusing an
atomic force microscope,” J. Korean Phys.Soc.,Vol.38 No. 3, pp. 251-254 March 2001.
79. S.-H. Park, Y.-T. Lee, and D. Ahn,"Spontaneous polarization and piezoelectric effects on
intersubband relaxation time inwurtzite GaN/AlGaN quantum-well," Jpn.J. Appl. Phys., vol.
40, pp.L941-L944, Sept. 2001.
80. C. M. Park, B. H. Choi, C. K. Hyon, S. W.Hwang, D. Ahn, and E. K. Kim, “Nano mold
lithography for 40 nm patterns,” J.Korean Phys. Soc., vol. 39, pp. 157-159, July 2001.
81. M. H. Son, B. H. Choi, S. W. Hwang, D. Ahn,C. K. Hyon, E. K. Kim, Y. Kim and J. S. Lim,
“Patterned formation of InAs QDs forsingle-electron device applications, “J. Korean Phys.
Soc., vol. 39, pp. 433-435, Sept. 2001.
82. Y. S. Yu, B. H. Choi, J. H. Oh, S. W. Hwangand D. Ahn, “Single electron memory with silicon
self-assembledquantum-dots,” J. Korean Phys. Soc., vol. 39, pp. S27-S29, Dec. 2001.
83. D. H. Kim, S. K. Sung, J. S. Sim, K. R. Kim,J. D. Lee, B. G. Park, B. H. Choi, S. W. Hwang,
and D. Ahn,”Single electron transistorbased on a silicon-on-insulator quantum wire fabricated
by a side-wall patterning method,” Appl. Phys. Lett., vol. 79, pp. 3812-3814,Dec. 2001.
84. W.Y. Hwang, D. Ahn, S. W. Hwang, “QuantumGambling using two nonorthogonal states,”
Phys. Rev. A, vol. 64, pp.064302:1-4,Nov. 2001.
85. W. Y. Hwang, D. Ahn,and S. W. Hwang, “Eavesdropper's optimal information in variations of
Bennett-Brassard 1984quantum key distribution in coherent attacks,” Physics Letters A, Vol.
279, pp.133-138, Jan.,2001
86. W. Son, M. S. Kim, J. Lee, and D. Ahn, “Entanglementtransfer from continuous variables to
qubit,” J. Mod. Opt., vol. 49,pp.1736-1746 (2002).
87. S. H.Park, D. Ahn, Y.-T. Lee, and S. L. Chuang, “Electronic properties ofInGaAs/GaAs strained coupled quantum dots modeled by eight-band k.p theory,”Jpn. J. Appl. Phys., vol. 42, pp. 144-149, 2002.
88. W. Y. Hwang, D. Ahn, S. W. Hwang, and Y. D.Han, “Entangled quantum clocks for measuring proper-time difference,” European Phys.J. D, vol 19, pp.129-132, 2002.
89. J.S. Hwang, G. S. Lee, K. J. Kong, D. J. Ahn, S. W. Hwang, and D. Ahn, “Electricaltransport through poly(G)-poly(C) DNA molecules,” Microelectronic. Eng., vol.63, pp. 161-165, 2002.
90. C. K.Hyun, S. Oh, H. Kim, S. Sull, S. W. Hwang, D. Ahn, Y. Park, and E. K. Kim, “Anautomated glitch-detection/restoration method of atomic force microscopeimages,” Review of Scientific Instruments, vol. 73, pp. 3245-3250, 2002.
91. K. R.Kim, D. H. Kim, S. K. Sung, J. D. Lee, B. G. Park, B. H. Choi, S. W. Hwang, andD. Ahn, “Single electron transistors with sidewall depletion gates onsilicon-on-insulator nanowire,” Jpn. J. Appl. Phys., vol. 41, pp. 2574-2577,2002.
92. M. S. Kim, J. Lee, D. Ahn, and P. L. Knight, “Entanglementinduced by a single-mode heat environment,” Phys. Rev. A., vol. 65,pp. 040101:1-4, April 2002.
93. J. S. Hwang, K. J. Kong, D. Ahn, G. S. Lee,D. J. Ahn, and S. W. Hwang, “Electrical transport through 60 base pairs ofpoly(G)-poly(C) DNA molecules,” Appl. Phys. Lett., vol. 81, pp. 1134-1136,2002.
94. H.-J. Lee, D. Ahn, and S. W. Hwang, “Dense coding in entangled states,”Phys. Rev. A, vol. 66, pp. 024304: 1-3, 2002.
95. Y.S. Yu, J. H. Oh, S.W. Hwang, and D. Ahn, “An equivalent circuit approach forthe single electron transistor model for efficient circuit simulation by SPICE,”Electron. Lett., vol. 38, pp. 850-852, 2002.
96. B.H. Choi, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, D. H. Kim, J. D. Lee, and B.G. Park, “Direct observation of excited states in double quantum dot siliconsingle electron transistor, “ Microelectronics Eng. 63, pp. 129-133, 2002.
97. B.H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B.G. Park, “Double-dot-like charge transport through a small size silicon singleelectron transistor,” Physica E, vol. 13, pp. 946-949, 2002.
98. D.H. Kim, S.K.Sung, K. R. Kim, J. D. Lee, B. G. Park, B. H. Choi, S.W. Hwang, andD. Ahn, “Silicon single-electron transistors with sidewall depletion gates andtheir application to dynamic single-electron transistor logic,” IEEE Trans.Electron. Dev., vol. 49, pp. 627-635, 2002.
99. D.Ahn, J. Lee, M. S. Kim, and S. W. Hwang, “Self-consistent non-Markovian theoryfor a quantum state evolution for quantum information processing,” Phys. Rev.A., vol. 66, pp. 012302:1-4, 2002.
100. H.Jeong, W. Son, M. S. Kim, D. Ahn, and C. Brukner, “Quantum nonlocality test forcontinuous variable states with dichotomic observables,” Phys. Rev. A, vol. 67,pp. 012106:1-4, 2003.
101. M.H. Son, J. H. Oh, D. Y. Jeong, D. Ahn, M. S. Jun, S. W. Hwang, J. E. Oh, and L.W. Engel, “Magneto-transport measurement through stacked InAs self-assembledquantum dots,” Appl. Phys. Lett., vol. 82, pp. 1230-1232, 2003.
102. W.Y. Hwang, J. Lee, D. Ahn, and S. W. Hwang, “Relativity of entanglement,” J.Korean Phys. Soc., vol. 42, pp. 167-169, 2003.
103. D.Ahn, H.J. Lee, and S. W. Hwang, “Lorentz covariant reduced-density-operatortheory for relativistic quantum information processing,” Phys. Rev. A., vol.67, pp. 032309:1-6, 2003.
104. D.Ahn, H.-j. Lee, Y. H. Moon, and S. W. Hwang, “Relativistic entanglement andBell’s inequality,” Phys. Rev. A, vol. 67, pp. 012103:1-8, 2003.
105. K.-j. Kong, H.W. Yeom, D. Ahn, H. Yi, and B.D. Yu, “Ab initio study ofadsorption and diffusion of Ag atoms on a Si(001) surface,” Phys. Rev. B,vol.67, p. 235328, 2003.
106. J. W. Kim, H. W. Yeom, K. J. Kong, B. D. Yu,D. Ahn, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, and D. W. Moon, “SpontaneousN incorporation onto a Si 100) surface,” Phys. Rev. Lett., vol. 90, pp.106101:1-4, 2003.
107. JungHyun Oh, D. Ahn, and S. W. Hwang, "Time-dependent currents of asingle-electro Transistor in dissipative environments," Phys. Rev. B, vol.68, p. 205403, 2003.
108. Seoung-Hwan PARK, Doyeol AHN, Yong-TakLEE and Shun-lien CHUANG, "Exciton Binding Energies an ZincblendeGaN/AlGaN Quanum Wells," Jpn.J.Appl., vol. 43, No.1, 2004, PP.140-143,2004.
109. B.Naser, K.H.Cho, S.W.Hwang, J.P.Bird,D.K.Ferry, S.M.goodnick, B.G.Park, D.Ahn,"Transport study of Ultre-thinSOI MOSEFETs," Physica E, vol. 19, pp. 39-43, 2003.
110. Y. S. Yu, S. H. Kim, B. H. Choi, S. H.Hong, S. W. Hwang, and D. Ahn, “SPICE-Compatible Floating-Dot Single-ElectronMemory Model with a New Description of SOI MOSFETs Including Quantum-MechanicalEffects,” J. Korean Phys. Soc. vol. 44, No. 1, pp. 117-120, pp. Jan., 2004.
111. M. S. Jun , D. Y. Jeong , J. E. Oh , S. W.Hwang, and D. Ahn, “Transport measurements through stacked InAs self-assembledquantum dots in time domain,“ Physica E , vol. 21, pp. 460-463, Mar., 2004.
112. Hyung Kwon Kim, Su Heon Hong, Bo Chang Kim,Jong Seoung Hwang, Shi Myoung Seong, Tai Hyun Park, Sung Woo Hwang, and DoyeolAhn, “Generation of local magnetic field by nano electro-magnets,” Jpn. J.Appl. Phys. ,vol.43, No. 4B, pp. 2054-2056, Apr., 2004.
113. S.H. Park, D. Ahn, and Yong-Tak Lee, “Finite element analysis of valence bandstructures in quantum wires, “J. Appl. Phys., vol. 96, pp. 2055-2062, 2004.
114. Jong Seung Hwang,Sung Woo Hwangand Doyeol Ahn, “Formation of Eeectrical interconnectsby self-trapping of deoxyribonucleic acid molecules, “Jpn. J. Appl. Phys., vol43, pp. 3803-3805, 2004..
115. J.S. Hwang, S. W. Hwang, and D. Ahn, “Electricalconduction measurement of thiol modified DNA molecules,” SuperlatticesMicrostruct., vol. 34, pp. 433-438, 2003.
116. M. S. Jun, S. W. Hwang, D. Y. Jeong, and D.Ahn, “Microwave design and characterization of a cryogenic dip probe for time domainmeasurements of nanodevices,” Rev. Sci. Instrum., vol. 75, pp. 2455-2460, 2004.
117. S. H. Son, K. H. Cho, S. W. Hwang, K. M.Kim, Y. J. Park, Y. S. Yu, and D. Ahn, “Fabrication and characterization ofMESFET-type quantum devices, “J. Appl. Phys., vol. 76, pp. 704-708, 2004.
118. K. H.Cho, S. H. Son, S. H. Hong, B. C. Kim, S. W. Hwang, D. Ahn, B.-G. Park, B.Naser, J.-F. Lin, J.P. Bird, D.K. Ferry, “Single-electron tunneling in silicon-on-insulator nano-wiretransistors, “Superlattices Microstruct., vol. 34, pp. 245-251,2003.
119. Jinhyoung Lee, Inbo Kim, Doyeol Ahn, HelenMcAneney, and M.S. Kim, “Completely positive non-Markovian decoherence, “ Phys.Rev. A, vol. 70, p. 024301, 2004.
120. Young Hoon Moon, Sung Woo Hwang, and DoyeolAhn, “Relativistic entanglements of spin 1/2 particles with general momentum, “Prog.Theor. Phys., vol. 112, pp. 219-240, 2004.
121. Y. S. Yu, S. H. Kim, S. W. Hwang, “All-analyticsurface potential model for SOI MOSFETs,” IEE Proc.-Circuits Devices Syst.,vol. 152, pp 183-188, 2005.
122. S. H. Hong, H. K. Kim, B. C. Kim, Y. S. Choi, J. S. Hwang, D. Ahn, S. K. Kwak,D. J. Ahn and S. W. Hwang, "Controllable capture of Au nano-particles byusing dielectrophoresis", Journal of the Korean Physical Society, vol.45,pp. S665~S668, 2004.
123. K. H. Cho, B. H. Choi, S. H. Son, S. W. Hwang, D. Ahn, B. G. Park, B. Naser,J.F. Lin, and J. P. Bird, "Evidence of double layer quantum dot formationin a silicon-on-insulator nanowire transistor", Applied Physics Letters, vol.86, p. 43101, 2005.
124. Jong Seung Hwang, Su Heon Hong, Hyung Kwon Kim, Young Whan Kwon, Jung Il Jin,Sung Woo Hwang , and Doyeol Ahn, "Electrical transport properties ofAu-doped deoxyribonucleic acid molecules", Japanese Journal of AppliedPhysics, vol. 44, pp. 2623-2625, 2005
125. Jung Hyun Oh, D. Ahn, and S. W. Hwang, "Dynamical responses of quantumdots by pulsed fields", Physical Review B, vol. 71, p. 205321, 2005.
126. H.-j. Lee, W. Namgung, and D. Ahn, “ Entanglement generates entanglement:entanglement transfer by interaction,” Phys. Lett. A, vol. 338, pp. 192-196,2005.
127. H. Mcaneney, J. Lee. D. Ahn, and M. S. Kim, “Non-Markovian decoherence:complete positivity and decomposition,” J. Mod. Opt., vol. 52, pp. 935-943,2005.
128. S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body opticalgain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasersand comparison with experiment,” Appl Phys. Lett. vol. 87, p. 044103, 2005.
129. D. Ahn, “Intervalley interactions in Siquantum dots,” J. Appl. Phys., vol. 98, p.033709, 2005
130. S.-H. Park, K. J. Kim, S. N. Yi, D. Ahn, and S. J. Lee, “ZnO/ZnMnO quantum welllasers for optoelectronic applications in the blue and the UV spectral regions,”J. Korean Phys. Soc., vol. 47, PP.448-453, 2005.
131. D. Ahn, S. H. Park, E. H. Park, and T. K. Yoo, “Non-Markovain gain andluminescence of an InGaN-AlInGaN quantum well with many-body effects,” IEEE J.Quantum Electron., vol. 41, pp. 1253-1259, 2005.
132. M. S. Jun, D. Y. Jeong, S. H. Lee, K. Heo, J. E. Oh, S. W. Hwang, and D. Ahn, “Transportexperiments on InAs self-assembled quantum dots in the microwave regime,” Phys.Rev. B., vol. 72, p. 085319, 2005.
133. S.-H. Park, H.-M. Kim, and D. Ahn, “Optical gain in GaN quantum well withquaternary AlInGaN barriers, “ Jpn. J. Appl. Phys. 44, pp. 7460-7463, 2005.
134. K. H. Kim, G. B. Kim, S. W. Hwang, S. H. Lee and D. Ahn, “A wide dynamic rangeanalog predistortion type linearizer using self-cancellation scheme,” IEEEMicrowave and Wireless Comp. Lett., vol. 15, pp. 661-663, 2005.
135. J. H. Oh, D. Ahn, and S. W. Hwang, “Current and noise expressions forradio-frequency single electron transistors,” Phys. Rev. B, vol. 72, p. 165348,2005.
136. S. H. Park, K. J. Kim, S. N. Yi, D. Ahn, and S. J. Lee,"Optical gain in wurtzite ZnO/ZnMaO quantum well lasers," Jpn. J.Appl. Phys., vol. 46, pp. L1403-L1406, 2005.
137. D. Ahn, S.-H. Park, E. H. Park, and T. K. Yoo,"Optical gain and luminescence of a ZnO-MaZnO quantum well," IEEEPhoton. Technol. Lett., vol. 18, pp. 349-351, 2006.
138. Y. S. Yu, S. H. Son, S. W. Hwang, N. K. Park, H.-K.Park, J. H. Oh, and D. Ahn, "Simulation and analysis of radio-frequencysingle-electron transistor (RF-SET) by SPICE," J. Korean Physical Soc.,vol. 47, p. S543, 2005.
139. K. H. Cho, Y. C. Jung, S. H. Son, S. W. Hwang, D. Ahn,B.-G. Park, and J. P. Bird, "Magneto-transport in a silicon-on-insulatornanowire transistor," J. Korean Physical Soc., vol. 47, p. S526, 2005.
140. S. H. Son, Y. S. Choi, K. H. Cho, S. W. Hwang, J. I.Lee, and Y. J. Park, Y. S. Yu, and D. Ahn, "Single-electron transport inGaAs/AlGaAs nano-In-plane-gate transistors," J. Korean Physical Soc., vol 47,p. S517, 2005.
141. H. K. Kim, S. H. Hong, S. W. Hwang, J. S. Hwang, D.Ahn, S. Seong, and T. H. Park, "Magnetic capture of a single magneticnanoparticle using nanoelectromagnets," J. Appl. Phys. vol. 98, p. 104307- ,2005.
142. S.-H. Park and D. Ahn, "Spontaneous andpiezoelectric polarization effects in wurtzite ZnO/MgZnO quantum welllasers," Appl. Phys. Lett. , vol. 87, p. 253309, 2005.
143. Y. S. Yu, S. W. Hwang, and D. Ahn, "Transientmodelling of single-electron transistors for efficient circuit simulation bySPICE," IEE Proc., vol 152, pp. 691-696, 2005.
144. S. H. Hong, H. K. Kim, K. H. Choi, S. W. Hwang, J. S.Hwang and D. Ahn, "Fabrication of single electron transistors withmolecular tunnel barriers using ac dielectrophoresis technique," J. VacuumSci. Technol., vol. 24, pp. 136-138, 2006.
145. S. H. Park and D. Ahn, "Erratum: Spontaneous andpiezoelectric polarization effects in wurtzite ZnO/MgZnO quantum welllasers," Appl. Phys. Lett., vol. 88, p. 159901, 2006.
146. S. H. Son, Y. S. Choi, S. W. Hwang, J. I. Lee, Y, J,Park, Y. S. Yu and D. Ahn, "Gate bias controlled NDR in an in-plane-gatequantum dot transistor," Physica E, vol. 32, pp. 532-535, 2006.
147. J. S. Hwang, H. T. Kim, S. W. Hwang and D. Ahn, "DCtransport characteristics of lambda DNA molecules and effect of RFsignals," Jpn. J. Appl. Phys., vol. 45, pp. 5471-5473, 2006.
148. D. Ahn, "Final state boundary condition of theSchwarzschild black hole," Phys. Rev. D, vol. 74, p. 084010, 2006.
149. S.-H. Park and D. Ahn, "Depolarization effects in(1122)-oriented InGaN/GaN quantum well structures," Appl. Phys. Lett.,vol. 90, p. 013505, 2007.
150. D. Ahn, "Wigner rotation of spin 1/2 Particles inRindler spacetime," J. Korean Phys. Soc., vol. 50, pp. 6-9, 2007.
151. S.-H. Park, H. M. Kim, and D. Ahn, "Electronic andOoptical properties of 1.55 µm GaInNAs/GaAs quantum-well structures," Jpn.J. Appl. Phys., vol. 46, pp. 152-155, 2007.
152. S.-H. Park andD. Ahn, "Crystal orientation effects on electronic and optical propertiesof wurtzite ZnO/MgZnO quantum well lasers," Optical and QuantumElectronics , vol. 38, pp. 935-952, 2007.
153. D. Ahn, "Hawking Effects on the Entanglement neara Schwarzschild Black Hole," J. Korean Phys. Soc., vol. 50, pp. 368-372,2007.
154. Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W.Hwang, and D. Ahn, "Transport spectroscopy of a quantum dot insilicon-on-insulator (SOI) MOSFET," J. Korean Phys. Soc., vol. 50, pp. 885-888,2007.
155. J. S. Hwang, M. H. Son, J. H. Oh, D. Ahn, S. H. Hong,H. K. KIm, and S. W. Hwang, "Transport study of Lambda DNA molecules,"J. Korean Phys. Soc. , vol. 50, pp. 902-904, 2007.
156. D. Ahn, "Control of black hole evaporation?"J. High Energy Physics. , vol. 03, p. 021, 2007.
157. Y. S. Yu, S. H. Son, H. T. Kim, Y. G. Kim, J. H. Oh, H.Kim, S. W. Hwang, B. H. Choi, and D. Ahn, "Transmission-TypeRadio-Frequency Single-Electron Transistor with In-Plane-Gate Single-ElectronTransistor," Jpn. J. Appl. Phys., vol. 46, pp. 2592-2595, 2007)
158. K. H. Cho, Y. C. Jung, B. H. Hong, S. W. Hwang, J. H.Oh, D. Ahn, S. D. Suk, K. H. Y대, D. Park, W. S. Lee, "Observationof three-dimensional shell filling in cylindrical silicon nanowire singleelectron transistors," Appl. Phys. Lett. , vol. 90, p. 182102, 2007.
159. J. H. Oh, D. Ahn, J. S. Hwang, M. H. Son, and S. W.Hwang, "Calculation of the tunneling current and the noise for aradio-frequency single electron transistor based on a Green's function approach,"J. Korean Phys. Soc. , vol. 50, pp. 1869-1872, 2007.
160. D. Ahn and M. S. Kim, "Hawking-Unruh effect andthe entanglement of two-mode squeezed states in Riemannian space time,"Phys. Lett. A , vol. 366, pp. 202-205, 2007.
161. D. Ahn, "Wigner Rotation of a Spin 1/2 Particlenear the Event Horizon of a Schwarzschild Black Hole," J. Korean Phys.Soc., vol. 51, pp. 470-474, 2007.
162. Y. C. Jung, K. H. Cho, S. W. Hwang, D. Ahn, and Y. S.Yu, "Observation of gate bias dependent interface coupling in thinsilicon-on-insulator metal-oxide-semiconductor field-effect transistors,"J. Appl. Phys., vol. 102, p. 034509, 2007.
163. S. H. Lee, Y. S. Yu, S. W. Hwang, and D. Ahn,"Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE,"J. Nanoscience and Nanotechnology, vol. 7, p. 4089, 2007.
164. C. M. Park, S. Lee, M. S. Choi, M. G. Kang, Y. C. Jung,S. W. Hwang, D. Ahn, J. H. Lee, and C. R. Song, "Fabrication ofPoly-Silicon Nano-Wire Transistors on Plastic Substrates," J. Nanoscienceand Nanotechnology, vol. 7, p. 4150, 2007.
165. S. H. Lee, Y. S. Yu, H. J. Kim, S. W. Hwang, and D.Ahn, "Modeling of Semiconductor Nanowire Field Effect TransistorsConsidering Schottky Barrier Height Lowering," J. Korean Phys. Soc., vol.51, p. S298, 2007.
166. S.-H. Park, D. Ahn, and S. L. Chuang, "Electronicand Optical Properties of a- and m-Plane Wurtzite InGaN-GaN QuantumWells," IEEE J. Quantum Electron. vol. 43, pp. 1175-1182, 2007.
167. J. H. Oh, D. Ahn, Y. S. Yu, and S. W. Hwang, "Green-function approach totransport through a gate-surrounded Si nanowire with impurity scattering,"Phys. Rev. B , vol. 77, p. 035313, 2008.
168. Y. S. Yu, S. H. Lee, J. H. Oh, H. J KIm, S. W. Hwang, and D. Ahn. "Acompact analytical current conduction model for depletion-mode n-type nanowirefield-effect transistor (NWFET) with bottom-gate structure," SemiconductorSci. Technol. , vol. 23, p. 035025,2008.
169. H.-K Kim, J. S. Hwang, S. W. Hwang, and D. Ahn, "Faraday’s InductionExperiment in Nano-Transformers," IEEE Trans. Nanotechnol., vol. 7, pp. 120-123, 2008.
170. S. H. Hong, M.G. Kang, H.-Y. Cha, M. H. Son, J. S. Hwang, H. J. Lee, S. H. Sull, S. W. Hawng, D. Whang, and D. Ahn, "Fabrication ofone-dimensional devices by a combination of AC dielectrophoresisand electrochemical deposition," Nanotechnology, vol. 19, p. 105305, 2008.
171. S.-H. Park, D. Ahn and J.-G. Kim, "Optical gain inGaN/InGaAlN quantum well structures with internal field," Appl. Phys.Lett. , vol. 92, p. 171115, 2008.
172. S. H. Park, D. Ahn, and J. E. Oh, "Opticalanisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with ageneral crystal orientation," Appl. Phys. Lett., vol. 92, p. 011130, 2008.
173. J. S. Hwang, H. T. Kim, M. H. Son, J. H. Oh, S. W.Hwang, and D. Ahn, "Electronic transport properties of a single-wellcarbon nanotube field effect transistor with deoxyribonucleic acidconjugation," Physics E, vol. 40, pp.1115-1117, 2008.
174. J. H. Oh, D. Ahn, S. W. Hwang, J. S. Hwang, and M. H.Son, "Impurity scattering effects on transport through gate-all-aroundnanowires," Physica E, vol. 40, pp.1526-1529, 2008.
175. S. H. Son, M. G. Kang, S. W. Hwang, J. I. Lee, Y. J.Park, Y. S. Yu, and D. Ahn, "Hybrid integration of GaAs/AlGaAsin-plane-gate resonant tunneling and field effect transistors, "Physica E,vol. 40, pp. 2160-2162, 2008.
176. D. Ahn, Y. H. Moon, R. B. Mann and I. Fuentes-Schuller,“The black hole final state for the Dirac fields in Schwarzschild spacetime,”J. High Energy Phys. , vol. 06, p. 082, 2008.
177. D. Ahn and M. S. Kim, “Twist and teleportation analogyof the black hole final state,” Physical Review D, vol. 78, p. 064025, 2008.
178 S.-H. park , Y.Y. Lee and D. Ahn, “Intervalley splittings of Si quantum wells,” J. Appl. Phys.,vol. 104, p. 033703, 2008.
179. M.G. Kang, J. H. Lim, S. H. Hong, D. J. Lee, S. W. Hwang, D. Whang, J. S. Hwang,and D. Ahn, “Microwave characterization of a single wall carbon nanotube bundle,”Jpn. J. Appl. Phys., vol. 47, pp.4965-4968, 2008.
180. Y.C. Jung, K. H. Cho, B. H. Hong, S. H. Son, D. S. Kim, D. Whang, S. W Hwang, Y.S. Yu, and D. Ahn, “Fabrication and characterization of sidewall definedsilicon-on-insulator single-electron transistor,” IEEE Trans. Nanotechnol.,vol. 7, pp. 544-550, 2008.
181. Y.C. Jung, D. S. Kim, B. H. Hong, K. H. Cho, S. W. Hwang, D. Ahn, Y. S. Y, and B.H. Choi, “Fabrication of a double quantum dot structure,” J. Nanosci.Nanotechnol., vol. 8, pp. 5009-5013, 2008.
182. S.N. Ko, J. H. Bae, Y. Y. Lee, Y. H. Moon, J. H. Oh, and D. Ahn, “Effects ofconfinement on the valley splitting of Si quantum structures,” J. Korean Phys.Soc., vol. 53, pp. 3322-3327, 2008.
183. S.-H. Park, D. Ahn, and J.-W. Kim, “High-efficiency staggered 530 nmInGaN/InGaN/GaN quantum-well light-emitting diodes,” Appl. Phys. Lett., vol. 94, p. 041109, 2009.
184. S.-H. Park, and D. Ahn, “Internal field engineering in CdZnO/MgZnO quantum wellstructures,” Appl. Phys. Lett., vol. 94, p. 083507, 2009.
185. Y.S. Yu, J. H. Oh, H. T. Kim, Y. G. Kim, S. H. Son, B. H. Choi, S. W. Hwang, andD. Ahn, “Simulation method for transmission-type radio-frequencysingle-electron transistor (RF-SET) operation by SPICE,” Semicond. Sci.Technol., vol. 24, p. 025020, 2009.
186. J.S. Hwang, H. T. Kim, H. K. Kim, M. H. Son, S. W. Hwang, and D. Ahn, “Electricaltransport properties of a single wall carbon nanotube network,” Phys. StatusSolidi B, vol. 246, pp. 744-748, 2009.
187. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Internal efficiency of staggeredInGaN/InGaN quantum-well light-emitting diodes,” J. Korean Phys. Soc. , vol. 54,pp. 2464-2467, 2009.
188. J.S. Hwang, D. S. Kim, D. Ahn, and S. W. Hwang, “Transport properties of aDNA-conjugated single-wall carbon nanotube field-effect transistor,” Jpn. J.Appl. Phys., vol. 48, p. 06FD08, 2009.
189. J.S. Hwang, S. W. Hwang, and D. Ahn, “Electrical properties of lambdadeoxyribonucleic acid films.” J. Korean Phys. Soc., vol. 55, pp. 352-355, 2009.
190. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Dip-shaped InGaN/GaNquantum-well light-emitting diodes with high efficiency,” Appl. Phys. Lett.,vol. 95, p. 063507, 2009.
191. H.T. Kim, Y. K. Kim, S. H. Son, Y. S. Yu, D. Whang, D. Ahn, and S. W. Hwang, “Radiofrequency electrical pulse characterization of defect states in a GaAs/AlGaAsnarrow channel field effect transistor,” Semicond. Sci. Technol., vol. 24, p.085018, 2009.
192. S.H. Lee, Y. S. Yu, S. W. Hwang, and D. Ahn, “A SPICE-compatible new siliconnanowire field-effect transistors (SNWFETs) model,” IEEE Trans. Nanotechnol.,vol. 8, pp. 643-649, 2009.
193. Y.S. Yu, S. H. Lee, D. S. Kim, Y. C. Jung, S. W. Hwang and D. Ahn, “A bottom-gatedepletion-mode nanowire field effect transistor (NWFET) model including aSchottky diode model,” J. Korean Phys. Soc., vol. 55, pp. 1162-1166, 2009.
194. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Electronicand optical properties of staggered InGaN/InGaN quantum-well light-emittingdiodes,” Phys. Status Solidi A, vol. 206, pp. 2637-2640, 2009.
195 S.-H. Park,D. Ahn, B—H. Koo,and J. E. Oh, “Optical gain improvementin type-IIInGaN/GaNSb/GaN quantum well structures composed of InGaN and GaNSblayers,” Appl. Phys. Lett. , vol. 96, p. 051106, 2010.
196. S.-H. Park, D. Ahn, and B.-H. Koo, “Opticalgain characteristics in (1120)-oriented CdZnO/MgZnO quantum wells emitting at360-400 nm,” Semicond. Sci. Technol., vol. 25, p. 045016, 2010.
197. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Structural dependence of optical gainin dip-shaped InGaN/GaN quantum wells,“Semicond. Sci. Technol. , vol. 25, p. 095013,2010.
198. S.-H. Park, Y.-T. Moon, J.S. Lee, H. K. Kwon, J. S. Park and D. Ahn, “Enhancement of light power forstrain-compensated hybrid InGaN/InGaN/MaZnO light-emitting diodes,” Appl. Phys.Letts., vol. 97, p. 121107, 2010.
199. H. K. Kim, J. S. hwang, S.W. Hwang and D. Ahn, “Magnetic bead detection using nano-transformers,“Nanotechnology., vol. 21, p. 465501, 2010.
200. D. Ahn, “Effects of Black hole evaporation onthe quantum entangled state,” J. Korean Phys. Soc.,vol. 57, pp. 725-731, 2010.
201. S.-H. Park, Y.-T. Moon, J. S. Lee, H. K.Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of greenstrain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status SolidiA, vol. 208, pp. 195-198, 2011.
202. D. Ahn, “Calculation of permittivity tensorsfor invisibility devices by effective medium approach in general relativity,”J. Modern Opt., vol. 58, pp. 700-710, 2011.
203. J. H. Oh, D. Ahn and V. Bubanja,” Transporttheory of coupled quantum dots based on the auxiliary-operator method,” Phys.Rev. B, vol. 83, p. 205302, 2011.
204. J. H. Oh and D. Ahn, “Klein tunneling throughan oblique barrier in graphene ribbons, “ J. Korean Phys. Soc., vol. 59, pp.2786-2791, 2011.
205. J. Kim and D. Ahn, “Effectof indirect interband absorption in Ge/SiGe quantum wells, “ J. Appl. Phys.,vol. 110, p. 083119, 2011.
206. S.-H. Park, Y.-T. Moon,D.-S. Han, J. S. Park, M. S. Oh, and D. Ahn, “Light emission enhancement inblue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett., vol. 99, p. 181101, 2011.
207. Y. Y Lee and D. Ahn,“Dispersive finite-difference time-domain (FDTD) analysis of the elliptic cylindricalcloak,” J. Korean Phys. Soc., vol. 60, pp.1349-1360, 2012.
208. D. Ahn, “Black hole state evolution, finalstate and Hawking radiation,” Class. Quantum Grav., vol. 29, p. 224007, 2012.
209. D. Ahn and S.-H. Park,“Theory of non-polar and semi-polar nitride semiconductor quantum-wellstructures,” Semicond. Sci. Technol., vol. 27, p. 024011, 2012.
210. Y. Y. Lee and D. Ahn, “Dispersive full-wavefinite-difference time-domain analysis of the bipolar cylindrical cloak basedon the effective medium approach,” J. Opt. Soc. Am. B, vol. 30, pp. 140-148, 2013.
211. D. Ahn and S. L. Chuang,“High optical gain of I-VII semiconductor quantum wells for efficientlight-emitting devices,” Appl. Phys. Lett., vol 102, p. 121114, 2013.
212. S.-H. Park, W.-P. Hong andD. Ahn,” Crystal orientation effect on intersubband transition propertiesof (11n)-oriented ZnCdTe/ZnTe semiconductor quantum dots,”Physica B, vol. 420, pp. 36-39, 2013..
213. Y. Y. Lee and D. Ahn, ”Full-wavefinite-difference time-domain analysis of the invisibility cloak mapped to aline segment with isotropic complementary media,” J. Opt. Soc. Am. B, vol. 30, pp.2148-2156, 2013.
214. D. Ahn, C. R. Myers, T. C. Ralph and R. B.Mann, “Quantum state cloning in the presence of a closed timelike curve,” C. R.Myers.
215. S.-H. Park and D. Ahn, “Optical polarizationcharacteristics of m-plane InGaN/GaN quantum well structures and comparisonwith experiment,” Appl. Phys. Lett., vol. 103, p. 101107, 2013.
216. S.-H. Park and D. Ahn, “Optical emissioncharacteristics of pseudo polarization-matched green AlInGaN/InGaN quantum wellstructures, “ IEEE J. Selected Topics in Quantum Electron., vol. 19, p.1901308, 2013.
217. Y. Y. Lee, E. S. Kang, K. H. Jung, J. W. Leeand D. Ahn, “Elliptic cylindrical pseudo-optical black hole for omnidirectional lightabsorber,” E. S. Kang,
PATENTS
1. “Polarization tunable optoelectronicdevices,” U. S. Patent #5,079,774, filing date 12/27/90.
2. “Semiconductor laser made of group II-VIcompounds,” U.S. Patent #5,291,506, filing date 12/28/92(priority date 12/28/91, Korea).
3. “High-optical gain quantum-well semiconductorlaser,” U. S. Patent #5,345,461, filing date 11/13/92 (priority date 12/30/91,Korea).
4. “Tensile-strained blue-green II-VIquantum-well laser,” U. S. Patent #5,377,214, filing date 1/26/94 (priority date 1/26/93,Korea).
5. “Strained quantum-well semiconductor laserdiode,” U. S. Patent #5,410,562, filingdate 4/13/93 (priority date 4/13/92, Korea).
6. “Infraredphotodector using delta-doped semiconductors,” US Patent #5,757,025, May 26, 1998.
7. “Universal quantum gate,:” US Patent#7,655,850 B1, February 2, 2010.
8. “Nanometer scale magnetization,” US Patent # 8,004,793, Agust 23, 2011.
9. “Polariton mode optical switch,” US Patent # 8,063,396, November 22, 2011.
10. “Copper blend I-VIIcompound semiconductor light-emitting devices,” US Patent # 8,058,641,November 15, 2011.
11. “Optoelectronic devices,” US Patent #8,054,862, November 8, 2011
12. “Magnetic resonancecompatible magnetic field detection, based on diffuse reflectance ofnano-magnet sets,” US Patent #8, 289,022, October 16, 2012.
13. “Detection ofmagnetic fields using nano-magnets,” US Patent #8,264224, September 11, 2012.
14. “Semiconductordevice having strong excitonic binding,” US Patent #8,253,145, August 28, 2012.
15. “Photodiodes withsurface plasmon couplers,” US Patent #8,247,881, August 21, 2012.
16. “Photodetectorcapable of detecting the visible light spectrum,” #8,227,793, July 24, 2012.
17. “Nanometer scale magnetization,”US Patent #8,223,457, July 17, 2012.
18. “PhotovoltaicDevices,” US Patent #8,106,421, January 31, 2012.
19. “PiezoelectricActuators,” US Patent #8,097,999, January 17, 2012.
20. “Method ofdetermining compound ratio of compound semiconductor for light generatingdevice,” US Patent #8, 178, 375, May 15, 2012.
21. “Photodetectorcapable of detecting long wavelength radiation, Japanese Patent #5,374,643, September27, 2013.
22. “Compoundsemiconductors,” US Patent #8,395,141, March 12, 2013.
23. “Semiconductordevice,” US Patent # 8,368,047, February 5, 2013.
24. “Photodetectors,” USpatent #8,373,153, February 12, 2013.
25. “Polariton modeoptical switch with composite structure,” US Patent # 8,368,990, February 5,2013.
26. “Light-electricityconversion device,” US Patent #8,367,925, February 5, 2013.
27. “Quantum Karnaughmap,” US patent, #8,671,369, March 11, 2014.
28. “Polarton modeoptical switch with composite structure,” US Patent, #8,681,411, March 25, 2014
29. “Copper blend I-VIIcompound semiconductor light-emitting devices,” US patent, #8,524,517,September 3, 2013.
30. “Coupled asymmetricquantum confinement structure,” US Patent, #8,558,257, October 15, 2013.
31. “Health monitoringsystem with a waveguide to a wave from a power source,” US Patent, #8,708,901,April 29, 2014.
32. “Coupled asymmetricquantum confinement structure,” US Patent, #8,704248, April 22, 2014.
33. “Quantum Karnaughmap,” Japanese Patent, #5,537,669, May 9, 2014.
34. “Coupled asymmetricquantum confinement structures,” US Patent 8,828,764, September 9, 2014.
35. “Photodetectorcapable of detecting long wavelength radiation,” US Patent 8, 809, 834, August19, 2014.
36. “Phtodetectorcapable of detecting the visible light spectrum,” US patent 8, 802, 481, August12, 2014.
37. “Compoundsemiconductors,” US Patent 8, 748, 862, June 10, 2014.
1. D. Ahn, "Theoretical aspects ofblue-green II-VI strained quantum well lasers,"
PhysicaB (invited paper), vol. 191, pp. 140-155, 1993.
2. D. Ahn and S. L. Chuang, "Thetheory of strained-layer quantum welllasers with
band-gaprenormalization," IEEE J. Quantum Electronics (invited paper),vol.30, pp.350-365,
1994.
3. D. Ahn, “Theory of non-Markovian opticalgain in semiconductor quantum-well lasers,”
Prog. Quantum Electron. (invited paper),vol. 21, pp. 249-287, 1997.
4. H. S. Min and D. Ahn, "Langevin noise sources for theBoltzmann transport equations with
the relaxation-time approximation innondegenerate semiconductors,"J. Appl. Phys., vol. 58,
pp. 2262-2265, 1985.
5. D. Ahn and S. L. Chuang, "Variationalcalculation of subbands in a quantum well with
electric field: Gram-Schmidt orthogonalizationapproach," Appl. Phys. Lett., vol. 49, pp.
1450-1452, 1986.
6. D. Ahn and S. L. Chuang, "Exactcalculations of quasi-bound states of an isolated quantum
well with uniform electric field:quantum-well Stark resonance," Phys. Rev. B, vol. 34, pp.
9034-9037, 1986.
7. D. Ahn and S. L. Chuang,"Intersubband optical absorption in a quantum well with an applied
electric field," Phys. Rev. B, vol.35, pp.4149-4151, 1987.
8. D. Ahn and S. L. Chuang,"Nonlinear intersubband optical absorption in a semi-conductor
quantum well," J. Appl. Phys., vol.62, pp. 3052-3055, 1987.
9. D. Ahn and S. L. Chuang, "Calculationof linear and nonlinear intersubband optical
absorption in a quantum well model withan applied electric field," IEEE J. Quantum
Electron., vol. QE-23, pp. 2196-2204,1987.
10. D. Ahn and S. L. Chuang, "The electric-field dependence of intrasubbandpolar optical
phonon scattering in a quantumwell," Phys. Rev. B, vol. 37, pp. 2529-2535,1988.
11. D. Ahn and S. L. Chuang, "Electric-field dependence of the intersubbandoptical absorption in
a semiconductor quantum well,"Superlattices and Microstructures, vol. 4, pp. 153-157, 1988.
12. D. Ahn and S. L. Chuang, "A field effect quantum-well laser with lateralcurrent injection," J.
Appl. Phys., vol. 64, pp. 440-442, 1988.
13. D. Ahn and S. L. Chuang, and Y.-C. Chang, "Valence band mixing effects onthe quantum-
well laser gain and refractive indexchange," J. Appl. Phys., vol. 64,pp. 4056-4064, 1988.
14. D. Ahn and S. L. Chuang, "Optical gain in a strained-layer quantum-welllaser," IEEE J.
Quantum Electron., vol. QE-24, pp.2400-2406, 1988.
15. D. Ahn and S. L. Chuang, "Model of the field-effect quantum-well laserwith free carrier
screening and valence band mixing,"J. Appl. Phys., vol. 64, pp. 6143-6149, 1988.
16. L. Tsang, D. Ahn, and S. L. Chuang, "Electric fieldcontrol of second harmonic generation in
a quantum well," Appl. Phys. Lett.,vol. 59, pp. 697-699, 1988.
17. S. L. Chuang and D. Ahn, "Opticaltransitions in a parabolic quantum well with an electric
field- Analytic solutions, "J.Appl. Phys., vol. 65, pp. 2822-2826, 1989.
18. D. Ahn, "Collision broadening of optical gain in semiconductorlasers," J. Appl. Phys. vol. 65,
pp. 4517-4520, 1989.
19. D. Ahn, "Enhancement of Stark effect in coupled quantum wells for opticalswitching
devices," IEEE J. Quantum Electron.,vol. QE-25, pp. 2260-2265, 1989.
20. D. Ahn and S. L. Chuang, "Optical gain and gain suppression ofquantum-well lasers with
valence band mixing," IEEE J.Quantum Electron., vol. QE-26, pp. 13-24, 1990.
21. D. Ahn, "Theory of polar-optical-phonon scattering in a semiconductor quantumwire," J. Appl.
Phys., vol 69, pp. 3596-3600, 1991.
22. D. Ahn, T.-K. Yoo, E. Mendez, and S. L. Chuang, "Optical gain controlmodel of the quantum-
well laser diode," J. Appl. Phys.,vol. 70, pp.5246-5253, 1991.
23. D. Ahn, T.-K. Yoo, and H. Y. Lee, "Optical gain of the CdZnSe-ZnSequantum-well laser," Appl.
Phys. Lett., vol. 59, pp. 2669-2671,1991.
24. D. Ahn and T. K. Yoo, "Theoretical analysis of strained-layer InGaAs /GaAs quantum-well-lasers
with gain-suppression and valence bandmixing," Appl. Phys. Lett., vol. 60, pp. 548-550, 1992.
25. D. Ahn and T.-K. Yoo,"II-VI strained quantum well for a room-temperatureblue-green laser,"
J. Korean Phys. Soc., vol. 25, pp. 45-51,1992.
26. D. Ahn, and T.-K. Yoo, "Gain switching in coupled quantum wells,"Jpn. J. Appl. Phys., vol. 31,
pp. 1055-1058, 1992.
27. D. Ahn, T. K. Yoo and S. L. Chuang,"Strained II-VI quantum wells forapplications in room-
temperature blue-green laser," Jpn.J. Appl. Phys.,vol. 31, pp. L556-L559,1992.
28. D. Ahn, "Theory of phonon-limited mobility in a delta-doped quantumwell," Appl. Phys. Lett.,
vol. 61, pp.1567-1569, 1992.
29. D. Ahn and T. K. Yoo,"Envelope function calculation of linear andnonlinear optical gains in
strained-layer quantum wells," IEEEJ. Quantum Electron., vol. 29, pp. 2864-2872, 1993.
30. D. Ahn, "Intersubband transitions in a delta-doped semiconductor with anapplied electric field-
exact solutions," Phys. Rev. B,vol. 48, pp. 7981-7985, 1993.
31. G. Zhang, M. Pessa, and D. Ahn, "Gain characteristics of strained-layerInGaAs/GaAs quantum
well lasers," Phys. Stat. Sol. (b),vol. 176, 00. K75-K79, 1993.
32. D. Ahn, "Band-gap renormalization in strained-layer quantum wells withmulti-subband valence-
band mixing effects," J. KoreanPhys. Soc.,vol. 27, pp. 70-75, 1994.
33. D. Ahn, "Thefirst order correction to phonon scattering due to dynamical screening inquantum wells," Phys. Rev. B, vol.50, pp. 1713-1716, 1994.
34. D. Ahn, "Time-convolutionless reduced density operator theory of anarbitrary driven system
coupled to the stochastic reservoir:Quantum kinetic equations for semiconductors." Phys. Rev. B,
vol.50, pp. 8310 - 8318, 1994.
35. D. Ahn, “Qualitativeestimation of optical gain in wide-band-gap semiconductor quantum wells,” J.Appl. Phys., vol. 76, pp. 8206-8208, 1994.
36. D. Ahn and S. C. Choi, “Band-gap renormalization effects on 980 nmstrained-layer InGaAs /
AlGaAs quantum-well lasers,” J. Appl.Phys., vol. 76, pp. 7648-7650, 1994.
37. D. Ahn, "Time-convolutionless reduced density operator theory of anarbitrary driven system
coupled to the stochastic reservoir. II:Optical gain and line shape function for a driven
semiconductors." Phys. Rev. B, vol.51, pp.2159 - 2166, 1995.
38. D. Ahn, “Theoretical study of strained InGaP quantum-well lasers,” Appl. Phys.Lett., vol. 66,
pp. 628-630 (1995).
39. D. Ahn and S. J. Yoon, “On the effects of spin-orbit coupling on the opticalgain of strained
layer quantum wells,” J. Korean Phys.Soc., vol. 28, pp. 145-151, 1995.
40. D. Ahn, “Time-convolutionless non-Markovian quantum kinetics of drivensemiconductors ,”
J. Korean Phys. Soc.(invited paper),vol. 28, pp. S318-S326, 1995.
41. D. Ahn, “The theory of non-Markovian optical gain in semiconductor lasers,”IEEE J. Selected
Topics in Quantum Electron., vol. 1, pp.301-307, 1995.
42. D. Ahn, S. J. Yoon, S. L. Chuang, and C. S. Chang, “On the theory of optical gainin strained-
layer quantum wells within the 6x6Luttinger-Kohn model,” J. Appl. Phys., vol. 78, pp. 2489-
2497, 1995.
43. D. Ahn, “Calculations of hole-phonon scattering in strained-layer quantumwells,” J. Appl. Phys.,
vol. 78, pp. 4505-4509, 1995.
44. D. Ahn, “Band-structure engineering of a cubic GaN quantum-well laser,”Photonic Technol.
Lett., vol. 8, pp. 194-196, 1996.
45. D. Ahn, "Optical gain of a quantum-well laser with non-Markovianrelaxation and many-body
effects," IEEE J. Quantum Electron.,vol. 32, pp. 960-965, 1996.
46. D. Ahn,"Optical gain of InGaP and cubic GaN quantum-well lasers with verystrong spin-orbit-
coupling," J. Appl. Phys., vol. 79,pp. 7731-7737, 1996.
47. D. Ahn, "Non-Markovian gain of a quantum-well laser with many-bodyeffects," Appl. Phys.
Lett., vol.79, pp. 2498 - 2500, 1996.
48. D. Ahn, "On the theory optical gain of strained-layer hexagonal and cubicGaN quantum-well
lasers, "Jap. J. Appl. Phys., vol.35, pp. 6079 - 6083, 1996.
49. D. Ahn and S.-H. Park, "Optical gain of strained hexagonal and cubic GaNquantum-well
lasers," Appl. Phys. Lett., vol. 69,pp. 3303-3305, 1996.
50. S. J. Yoon and D. Ahn, "An analyticapproach to calculate the valence-band structure of
quantum wells with spin-orbit-couplingeffects," J. Korean Phys. Soc., vol. 29, pp. 88-93, 1996.
51. S.-H. Park and D. Ahn, "Screeningeffects on the band-gap renormalization of strained
InGaAs/InGaAsP quantum well lasers latticedmatched to GaAs", Appl. Phys. Lett., vol. 68,
pp. 1844-1846, 1996.
52. S.-H. Park and D. Ahn, "Opticalgain calculation of strained quantum-well lasers by the Fourier
expansion method," Jap. J. Appl.Phys., vol. 35, pp. 5740 -5744, 1996.
53. S.-H. Park and D. Ahn, "Theoreticalpredictions of optical gain in strained GaN/AlLnN quantum-
well lasers," Journal Korean Phys.Soc., vol. 30, pp. 345-348, 1997.
54. S.-H. Park and D. Ahn, "Optical gaincalculation of strained hexagonal and cubic GaN / AlGaN
quantum-well lasers," J. KoreanPhys. Soc., vol. 30, pp. 661-664, 1997.
55. S. H. Park and D. Ahn,"Many-body effects on optical gain in strained hexagonal and cubic
GaN/AlGaN quantum-well lasers,"Appl. Phys. Lett., vol. 71, pp. 398-400,1997.
56. D. Ahn, "Theory of non-Markoviangain in strained-layer quantum-well lasers with many-body
effects," IEEE J. QuantumElectron., vol. 34, pp. 344-352, 1998.
57. D. Ahn, S.-H. Park, and T. I. Kim,"Non-Markovian gain of strained-layer wurtzite GaN
quantum-well lasers withmany-body effects," IEEE J. Selected Topics in Quantum Electron.,
vol. 4, pp. 520-526, 1998.
58. C. K. Hyon, S. C. Choi, S. W. Hwang, D. Ahn, Yong Kim, and E. K. Kim,"Direct nanometer-
scale patterning by the cantileveroscillation of an atomic force microscope" Appl. Phys. Lett.,
vol. 75, No. 2, pp. 292-294,1999.
59. Y. S. Yu, S. W. Hwang, and D. Ahn, "Macromodelingof Single-Electron Transistor for
Efficient Circuit Simulation",IEEE Tran. Elec. Dev., vol. 46, No. 8,pp. 1667-1671, 1999.
60. S.-H. Park and D. Ahn, "Intrabandrelaxation time in wurtzite GaN/InAlN quantum well," Jpn.
J. Appl. Phys., vol. 38, pp. L815-L818,1999.
61. S.-H. Park, S. L. Chuang, and D. Ahn,"Piezoelectric effects on many-body optical gain of zinc-
blende and wurtzite GaN/AlGaNquantum-well lasers," Appl. Phys. Lett., vol. 75, pp. 1354-
1356, 1999.
62. S. K. Jung, C. K. Hyun, J. H. Park, S. W.Hwang, D. Ahn, M. H. Son, B. D. Min, Y. Kim, and
E. K. Kim, "Fabrication andelectrical characterization of planar resonant tunneling devices
incorporating InAs self-assembledquantum dotes," Appl. Phys. Lett.,vol. 75, pp.. 1167-1169,
1999.
63. C. K. Hyun, S. C. Choi, S. W. Hwang, D. Ahn,Y. Kim, and E. K. Kim, "Nanostructure
patterning and manipulation using atapping mode atomic force microscope," J. Korean Phys.
Soc., vol. 35, pp. S987-S990, 1999.
64. Y. S. Yu, Y. I. Jung, J. H. Park, S. W. Hwang, and D. Ahn,"Simulation of Single-Electron
CMOS hybrid circuits using SPICE macro-modeling", J. Korean Phys.Soc., vol. 35, pp. S991-
S994, 1999.
65. C. K. Hyun, S. C. Choi, S. W. Hwang, D. Ahn,Y. Kim, and E. K. Kim, "Nanostructure
fabrication and manipulation by thecantilever oscillationof an atomic force microscope,"
Jpn. J. Appl. Phys., vol. 38, pp.12B-29:31, 1999.
66. D. Ahn, J. H. Oh, K.Kimm, and S. W. Hwang,"Time-convolutionless reduced-density-operator
theory of a noisy quantum channel:two-bit quantum gate for quantum information processing,"
Phys. Rev. A, vol. 61, pp.052310-1:9,2000.
67. S.-H. Park, S. L. Chuang, J. Minch, and D.Ahn, "Intraband relaxation time effects on non-
Markovian gain with many-body effectsand comparison with experiment," Semicond.Sci.
Technol. Vol. 15, pp. 1-6, 2000.
68. K. H. Kim, H. J. Chung, S. H. Yoon, S. W.Hwang, J. W. Park, S. W. Kim, J. Choi, and D. Ahn,
"Full software analysis andimpedance matching of radio frequency CMOS integrated circuits,"
IEEE transations on Componets andPackaging Technol., vol. 23, pp. 183-189, 2000.
69. S.-H. Park, Y.-T. Lee, and D. Ahn,"Spontaneous polarization and piezoelectric effects on
intraband relaxation time in wurtziteGaN/AlGaN quantum-well," Appl. Phys. A, vol. 71,
pp.589-592 ,2000.
70. S.-H. Park, D. Ahn, Y.-T. Lee,"Screening effects on electron-LO-phonon intersubband
scattering in wide quantum well andcomparison with experiment," Jpn. J. Appl. Phys., Vol. 38
No. 12A, pp. 6601-6605, 2000.
71. J. H. Oh, D. Ahn, S. W. Hwang,"Optically driven qubits in artificial molecule," Phys. Rev. A,
vol. 62, pp. 052306-1;9, 2000.
72. K. Kimm, H.-J. Lee, D. Ahn, and S. W. Hwang,"Dynamical suppression of Decoherence in
quantum registers," J. Korean. Phys.Soc., vol. 37, pp. 496-502, 2000.
73. W. Y. Hwang, H.-J. Lee, D. Ahn, and S. W.Hwang, "Efficient schemes for reducing imperfect
collective decoherences," Phys.Rev. A, vol. 62, p. 062305, 2000.
74. C. K. Hyon, S. C. Choi,S.-H. Song, S. W. Hwang, M. H. son, D. Ahn, Y. J. Park, and E. K.
Kim, “Application ofatomic-force-microscope direct pattering to selective positioning of InAs
quantum dots on GaAs,”Appl. Phys. Lett., Vol. 77, No. 16, pp.2607-2609, Oct., 2000.
75. S. K. Jung, S. W. Hwang, D. Ahn, J. H. Park, Yong Kim, and E. K. Kim, “Fabricationof quantum
dot transistors incorporating a single self-assembled quantum dot, “PhysicaE., Vol. 7 No. 3-4, pp.
430-434, May 2000.
76. W. Y. Hwang, D. Ahn, and S. W. Hwang, "Correlated errors in quantumerror corrections,"
Phys. Rev. A, vol. 63, p. 022303, 2001.
77. B. H. Choi, C. M. Park,S-H. Song, M. H. Son, S. W. Hwang, D. Ahn, and E. K. Kim,
“Selective growth ofInAs self-assembled quantum-dots on nanopatterned SiO2/Sisubstrate,”
Appl. Phys. Lett., Vol.78, No. 10, pp.1403-1405, Mar., 2001.
78. C. K. Hyon, S. C. Choi,S.-H. Song, S. W. Hwang, B D. Min, D. Ahn, Y. J. Park, and E. K. Kim,
“Selectivepositioning of InAs quantum dots on a GaAs substrate directly patterned byusing an
atomic force microscope,” J. Korean Phys.Soc.,Vol.38 No. 3, pp. 251-254 March 2001.
79. S.-H. Park, Y.-T. Lee, and D. Ahn,"Spontaneous polarization and piezoelectric effects on
intersubband relaxation time inwurtzite GaN/AlGaN quantum-well," Jpn.J. Appl. Phys., vol.
40, pp.L941-L944, Sept. 2001.
80. C. M. Park, B. H. Choi, C. K. Hyon, S. W.Hwang, D. Ahn, and E. K. Kim, “Nano mold
lithography for 40 nm patterns,” J.Korean Phys. Soc., vol. 39, pp. 157-159, July 2001.
81. M. H. Son, B. H. Choi, S. W. Hwang, D. Ahn,C. K. Hyon, E. K. Kim, Y. Kim and J. S. Lim,
“Patterned formation of InAs QDs forsingle-electron device applications, “J. Korean Phys.
Soc., vol. 39, pp. 433-435, Sept. 2001.
82. Y. S. Yu, B. H. Choi, J. H. Oh, S. W. Hwangand D. Ahn, “Single electron memory with silicon
self-assembledquantum-dots,” J. Korean Phys. Soc., vol. 39, pp. S27-S29, Dec. 2001.
83. D. H. Kim, S. K. Sung, J. S. Sim, K. R. Kim,J. D. Lee, B. G. Park, B. H. Choi, S. W. Hwang,
and D. Ahn,”Single electron transistorbased on a silicon-on-insulator quantum wire fabricated
by a side-wall patterning method,” Appl. Phys. Lett., vol. 79, pp. 3812-3814,Dec. 2001.
84. W.Y. Hwang, D. Ahn, S. W. Hwang, “QuantumGambling using two nonorthogonal states,”
Phys. Rev. A, vol. 64, pp.064302:1-4,Nov. 2001.
85. W. Y. Hwang, D. Ahn,and S. W. Hwang, “Eavesdropper's optimal information in variations of
Bennett-Brassard 1984quantum key distribution in coherent attacks,” Physics Letters A, Vol.
279, pp.133-138, Jan.,2001
86. W. Son, M. S. Kim, J. Lee, and D. Ahn, “Entanglementtransfer from continuous variables to
qubit,” J. Mod. Opt., vol. 49,pp.1736-1746 (2002).
87. S. H.Park, D. Ahn, Y.-T. Lee, and S. L. Chuang, “Electronic properties ofInGaAs/GaAs strained coupled quantum dots modeled by eight-band k.p theory,”Jpn. J. Appl. Phys., vol. 42, pp. 144-149, 2002.
88. W. Y. Hwang, D. Ahn, S. W. Hwang, and Y. D.Han, “Entangled quantum clocks for measuring proper-time difference,” European Phys.J. D, vol 19, pp.129-132, 2002.
89. J.S. Hwang, G. S. Lee, K. J. Kong, D. J. Ahn, S. W. Hwang, and D. Ahn, “Electricaltransport through poly(G)-poly(C) DNA molecules,” Microelectronic. Eng., vol.63, pp. 161-165, 2002.
90. C. K.Hyun, S. Oh, H. Kim, S. Sull, S. W. Hwang, D. Ahn, Y. Park, and E. K. Kim, “Anautomated glitch-detection/restoration method of atomic force microscopeimages,” Review of Scientific Instruments, vol. 73, pp. 3245-3250, 2002.
91. K. R.Kim, D. H. Kim, S. K. Sung, J. D. Lee, B. G. Park, B. H. Choi, S. W. Hwang, andD. Ahn, “Single electron transistors with sidewall depletion gates onsilicon-on-insulator nanowire,” Jpn. J. Appl. Phys., vol. 41, pp. 2574-2577,2002.
92. M. S. Kim, J. Lee, D. Ahn, and P. L. Knight, “Entanglementinduced by a single-mode heat environment,” Phys. Rev. A., vol. 65,pp. 040101:1-4, April 2002.
93. J. S. Hwang, K. J. Kong, D. Ahn, G. S. Lee,D. J. Ahn, and S. W. Hwang, “Electrical transport through 60 base pairs ofpoly(G)-poly(C) DNA molecules,” Appl. Phys. Lett., vol. 81, pp. 1134-1136,2002.
94. H.-J. Lee, D. Ahn, and S. W. Hwang, “Dense coding in entangled states,”Phys. Rev. A, vol. 66, pp. 024304: 1-3, 2002.
95. Y.S. Yu, J. H. Oh, S.W. Hwang, and D. Ahn, “An equivalent circuit approach forthe single electron transistor model for efficient circuit simulation by SPICE,”Electron. Lett., vol. 38, pp. 850-852, 2002.
96. B.H. Choi, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, D. H. Kim, J. D. Lee, and B.G. Park, “Direct observation of excited states in double quantum dot siliconsingle electron transistor, “ Microelectronics Eng. 63, pp. 129-133, 2002.
97. B.H. Choi, Y. S. Yu, D. H. Kim, S. H. Son, K. H. Cho, S. W. Hwang, D. Ahn, and B.G. Park, “Double-dot-like charge transport through a small size silicon singleelectron transistor,” Physica E, vol. 13, pp. 946-949, 2002.
98. D.H. Kim, S.K.Sung, K. R. Kim, J. D. Lee, B. G. Park, B. H. Choi, S.W. Hwang, andD. Ahn, “Silicon single-electron transistors with sidewall depletion gates andtheir application to dynamic single-electron transistor logic,” IEEE Trans.Electron. Dev., vol. 49, pp. 627-635, 2002.
99. D.Ahn, J. Lee, M. S. Kim, and S. W. Hwang, “Self-consistent non-Markovian theoryfor a quantum state evolution for quantum information processing,” Phys. Rev.A., vol. 66, pp. 012302:1-4, 2002.
100. H.Jeong, W. Son, M. S. Kim, D. Ahn, and C. Brukner, “Quantum nonlocality test forcontinuous variable states with dichotomic observables,” Phys. Rev. A, vol. 67,pp. 012106:1-4, 2003.
101. M.H. Son, J. H. Oh, D. Y. Jeong, D. Ahn, M. S. Jun, S. W. Hwang, J. E. Oh, and L.W. Engel, “Magneto-transport measurement through stacked InAs self-assembledquantum dots,” Appl. Phys. Lett., vol. 82, pp. 1230-1232, 2003.
102. W.Y. Hwang, J. Lee, D. Ahn, and S. W. Hwang, “Relativity of entanglement,” J.Korean Phys. Soc., vol. 42, pp. 167-169, 2003.
103. D.Ahn, H.J. Lee, and S. W. Hwang, “Lorentz covariant reduced-density-operatortheory for relativistic quantum information processing,” Phys. Rev. A., vol.67, pp. 032309:1-6, 2003.
104. D.Ahn, H.-j. Lee, Y. H. Moon, and S. W. Hwang, “Relativistic entanglement andBell’s inequality,” Phys. Rev. A, vol. 67, pp. 012103:1-8, 2003.
105. K.-j. Kong, H.W. Yeom, D. Ahn, H. Yi, and B.D. Yu, “Ab initio study ofadsorption and diffusion of Ag atoms on a Si(001) surface,” Phys. Rev. B,vol.67, p. 235328, 2003.
106. J. W. Kim, H. W. Yeom, K. J. Kong, B. D. Yu,D. Ahn, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, and D. W. Moon, “SpontaneousN incorporation onto a Si 100) surface,” Phys. Rev. Lett., vol. 90, pp.106101:1-4, 2003.
107. JungHyun Oh, D. Ahn, and S. W. Hwang, "Time-dependent currents of asingle-electro Transistor in dissipative environments," Phys. Rev. B, vol.68, p. 205403, 2003.
108. Seoung-Hwan PARK, Doyeol AHN, Yong-TakLEE and Shun-lien CHUANG, "Exciton Binding Energies an ZincblendeGaN/AlGaN Quanum Wells," Jpn.J.Appl., vol. 43, No.1, 2004, PP.140-143,2004.
109. B.Naser, K.H.Cho, S.W.Hwang, J.P.Bird,D.K.Ferry, S.M.goodnick, B.G.Park, D.Ahn,"Transport study of Ultre-thinSOI MOSEFETs," Physica E, vol. 19, pp. 39-43, 2003.
110. Y. S. Yu, S. H. Kim, B. H. Choi, S. H.Hong, S. W. Hwang, and D. Ahn, “SPICE-Compatible Floating-Dot Single-ElectronMemory Model with a New Description of SOI MOSFETs Including Quantum-MechanicalEffects,” J. Korean Phys. Soc. vol. 44, No. 1, pp. 117-120, pp. Jan., 2004.
111. M. S. Jun , D. Y. Jeong , J. E. Oh , S. W.Hwang, and D. Ahn, “Transport measurements through stacked InAs self-assembledquantum dots in time domain,“ Physica E , vol. 21, pp. 460-463, Mar., 2004.
112. Hyung Kwon Kim, Su Heon Hong, Bo Chang Kim,Jong Seoung Hwang, Shi Myoung Seong, Tai Hyun Park, Sung Woo Hwang, and DoyeolAhn, “Generation of local magnetic field by nano electro-magnets,” Jpn. J.Appl. Phys. ,vol.43, No. 4B, pp. 2054-2056, Apr., 2004.
113. S.H. Park, D. Ahn, and Yong-Tak Lee, “Finite element analysis of valence bandstructures in quantum wires, “J. Appl. Phys., vol. 96, pp. 2055-2062, 2004.
114. Jong Seung Hwang,Sung Woo Hwangand Doyeol Ahn, “Formation of Eeectrical interconnectsby self-trapping of deoxyribonucleic acid molecules, “Jpn. J. Appl. Phys., vol43, pp. 3803-3805, 2004..
115. J.S. Hwang, S. W. Hwang, and D. Ahn, “Electricalconduction measurement of thiol modified DNA molecules,” SuperlatticesMicrostruct., vol. 34, pp. 433-438, 2003.
116. M. S. Jun, S. W. Hwang, D. Y. Jeong, and D.Ahn, “Microwave design and characterization of a cryogenic dip probe for time domainmeasurements of nanodevices,” Rev. Sci. Instrum., vol. 75, pp. 2455-2460, 2004.
117. S. H. Son, K. H. Cho, S. W. Hwang, K. M.Kim, Y. J. Park, Y. S. Yu, and D. Ahn, “Fabrication and characterization ofMESFET-type quantum devices, “J. Appl. Phys., vol. 76, pp. 704-708, 2004.
118. K. H.Cho, S. H. Son, S. H. Hong, B. C. Kim, S. W. Hwang, D. Ahn, B.-G. Park, B.Naser, J.-F. Lin, J.P. Bird, D.K. Ferry, “Single-electron tunneling in silicon-on-insulator nano-wiretransistors, “Superlattices Microstruct., vol. 34, pp. 245-251,2003.
119. Jinhyoung Lee, Inbo Kim, Doyeol Ahn, HelenMcAneney, and M.S. Kim, “Completely positive non-Markovian decoherence, “ Phys.Rev. A, vol. 70, p. 024301, 2004.
120. Young Hoon Moon, Sung Woo Hwang, and DoyeolAhn, “Relativistic entanglements of spin 1/2 particles with general momentum, “Prog.Theor. Phys., vol. 112, pp. 219-240, 2004.
121. Y. S. Yu, S. H. Kim, S. W. Hwang, “All-analyticsurface potential model for SOI MOSFETs,” IEE Proc.-Circuits Devices Syst.,vol. 152, pp 183-188, 2005.
122. S. H. Hong, H. K. Kim, B. C. Kim, Y. S. Choi, J. S. Hwang, D. Ahn, S. K. Kwak,D. J. Ahn and S. W. Hwang, "Controllable capture of Au nano-particles byusing dielectrophoresis", Journal of the Korean Physical Society, vol.45,pp. S665~S668, 2004.
123. K. H. Cho, B. H. Choi, S. H. Son, S. W. Hwang, D. Ahn, B. G. Park, B. Naser,J.F. Lin, and J. P. Bird, "Evidence of double layer quantum dot formationin a silicon-on-insulator nanowire transistor", Applied Physics Letters, vol.86, p. 43101, 2005.
124. Jong Seung Hwang, Su Heon Hong, Hyung Kwon Kim, Young Whan Kwon, Jung Il Jin,Sung Woo Hwang , and Doyeol Ahn, "Electrical transport properties ofAu-doped deoxyribonucleic acid molecules", Japanese Journal of AppliedPhysics, vol. 44, pp. 2623-2625, 2005
125. Jung Hyun Oh, D. Ahn, and S. W. Hwang, "Dynamical responses of quantumdots by pulsed fields", Physical Review B, vol. 71, p. 205321, 2005.
126. H.-j. Lee, W. Namgung, and D. Ahn, “ Entanglement generates entanglement:entanglement transfer by interaction,” Phys. Lett. A, vol. 338, pp. 192-196,2005.
127. H. Mcaneney, J. Lee. D. Ahn, and M. S. Kim, “Non-Markovian decoherence:complete positivity and decomposition,” J. Mod. Opt., vol. 52, pp. 935-943,2005.
128. S. H. Park, D. Ahn, E. H. Park, T. K. Yoo, and Y. T. Lee, “Many-body opticalgain and intraband relaxation time of wurtzite InGaN/GaN quantum-well lasersand comparison with experiment,” Appl Phys. Lett. vol. 87, p. 044103, 2005.
129. D. Ahn, “Intervalley interactions in Siquantum dots,” J. Appl. Phys., vol. 98, p.033709, 2005
130. S.-H. Park, K. J. Kim, S. N. Yi, D. Ahn, and S. J. Lee, “ZnO/ZnMnO quantum welllasers for optoelectronic applications in the blue and the UV spectral regions,”J. Korean Phys. Soc., vol. 47, PP.448-453, 2005.
131. D. Ahn, S. H. Park, E. H. Park, and T. K. Yoo, “Non-Markovain gain andluminescence of an InGaN-AlInGaN quantum well with many-body effects,” IEEE J.Quantum Electron., vol. 41, pp. 1253-1259, 2005.
132. M. S. Jun, D. Y. Jeong, S. H. Lee, K. Heo, J. E. Oh, S. W. Hwang, and D. Ahn, “Transportexperiments on InAs self-assembled quantum dots in the microwave regime,” Phys.Rev. B., vol. 72, p. 085319, 2005.
133. S.-H. Park, H.-M. Kim, and D. Ahn, “Optical gain in GaN quantum well withquaternary AlInGaN barriers, “ Jpn. J. Appl. Phys. 44, pp. 7460-7463, 2005.
134. K. H. Kim, G. B. Kim, S. W. Hwang, S. H. Lee and D. Ahn, “A wide dynamic rangeanalog predistortion type linearizer using self-cancellation scheme,” IEEEMicrowave and Wireless Comp. Lett., vol. 15, pp. 661-663, 2005.
135. J. H. Oh, D. Ahn, and S. W. Hwang, “Current and noise expressions forradio-frequency single electron transistors,” Phys. Rev. B, vol. 72, p. 165348,2005.
136. S. H. Park, K. J. Kim, S. N. Yi, D. Ahn, and S. J. Lee,"Optical gain in wurtzite ZnO/ZnMaO quantum well lasers," Jpn. J.Appl. Phys., vol. 46, pp. L1403-L1406, 2005.
137. D. Ahn, S.-H. Park, E. H. Park, and T. K. Yoo,"Optical gain and luminescence of a ZnO-MaZnO quantum well," IEEEPhoton. Technol. Lett., vol. 18, pp. 349-351, 2006.
138. Y. S. Yu, S. H. Son, S. W. Hwang, N. K. Park, H.-K.Park, J. H. Oh, and D. Ahn, "Simulation and analysis of radio-frequencysingle-electron transistor (RF-SET) by SPICE," J. Korean Physical Soc.,vol. 47, p. S543, 2005.
139. K. H. Cho, Y. C. Jung, S. H. Son, S. W. Hwang, D. Ahn,B.-G. Park, and J. P. Bird, "Magneto-transport in a silicon-on-insulatornanowire transistor," J. Korean Physical Soc., vol. 47, p. S526, 2005.
140. S. H. Son, Y. S. Choi, K. H. Cho, S. W. Hwang, J. I.Lee, and Y. J. Park, Y. S. Yu, and D. Ahn, "Single-electron transport inGaAs/AlGaAs nano-In-plane-gate transistors," J. Korean Physical Soc., vol 47,p. S517, 2005.
141. H. K. Kim, S. H. Hong, S. W. Hwang, J. S. Hwang, D.Ahn, S. Seong, and T. H. Park, "Magnetic capture of a single magneticnanoparticle using nanoelectromagnets," J. Appl. Phys. vol. 98, p. 104307- ,2005.
142. S.-H. Park and D. Ahn, "Spontaneous andpiezoelectric polarization effects in wurtzite ZnO/MgZnO quantum welllasers," Appl. Phys. Lett. , vol. 87, p. 253309, 2005.
143. Y. S. Yu, S. W. Hwang, and D. Ahn, "Transientmodelling of single-electron transistors for efficient circuit simulation bySPICE," IEE Proc., vol 152, pp. 691-696, 2005.
144. S. H. Hong, H. K. Kim, K. H. Choi, S. W. Hwang, J. S.Hwang and D. Ahn, "Fabrication of single electron transistors withmolecular tunnel barriers using ac dielectrophoresis technique," J. VacuumSci. Technol., vol. 24, pp. 136-138, 2006.
145. S. H. Park and D. Ahn, "Erratum: Spontaneous andpiezoelectric polarization effects in wurtzite ZnO/MgZnO quantum welllasers," Appl. Phys. Lett., vol. 88, p. 159901, 2006.
146. S. H. Son, Y. S. Choi, S. W. Hwang, J. I. Lee, Y, J,Park, Y. S. Yu and D. Ahn, "Gate bias controlled NDR in an in-plane-gatequantum dot transistor," Physica E, vol. 32, pp. 532-535, 2006.
147. J. S. Hwang, H. T. Kim, S. W. Hwang and D. Ahn, "DCtransport characteristics of lambda DNA molecules and effect of RFsignals," Jpn. J. Appl. Phys., vol. 45, pp. 5471-5473, 2006.
148. D. Ahn, "Final state boundary condition of theSchwarzschild black hole," Phys. Rev. D, vol. 74, p. 084010, 2006.
149. S.-H. Park and D. Ahn, "Depolarization effects in(1122)-oriented InGaN/GaN quantum well structures," Appl. Phys. Lett.,vol. 90, p. 013505, 2007.
150. D. Ahn, "Wigner rotation of spin 1/2 Particles inRindler spacetime," J. Korean Phys. Soc., vol. 50, pp. 6-9, 2007.
151. S.-H. Park, H. M. Kim, and D. Ahn, "Electronic andOoptical properties of 1.55 µm GaInNAs/GaAs quantum-well structures," Jpn.J. Appl. Phys., vol. 46, pp. 152-155, 2007.
152. S.-H. Park andD. Ahn, "Crystal orientation effects on electronic and optical propertiesof wurtzite ZnO/MgZnO quantum well lasers," Optical and QuantumElectronics , vol. 38, pp. 935-952, 2007.
153. D. Ahn, "Hawking Effects on the Entanglement neara Schwarzschild Black Hole," J. Korean Phys. Soc., vol. 50, pp. 368-372,2007.
154. Y. S. Yu, D. H. Kim, J. D. Lee, B.-G. Park, S. W.Hwang, and D. Ahn, "Transport spectroscopy of a quantum dot insilicon-on-insulator (SOI) MOSFET," J. Korean Phys. Soc., vol. 50, pp. 885-888,2007.
155. J. S. Hwang, M. H. Son, J. H. Oh, D. Ahn, S. H. Hong,H. K. KIm, and S. W. Hwang, "Transport study of Lambda DNA molecules,"J. Korean Phys. Soc. , vol. 50, pp. 902-904, 2007.
156. D. Ahn, "Control of black hole evaporation?"J. High Energy Physics. , vol. 03, p. 021, 2007.
157. Y. S. Yu, S. H. Son, H. T. Kim, Y. G. Kim, J. H. Oh, H.Kim, S. W. Hwang, B. H. Choi, and D. Ahn, "Transmission-TypeRadio-Frequency Single-Electron Transistor with In-Plane-Gate Single-ElectronTransistor," Jpn. J. Appl. Phys., vol. 46, pp. 2592-2595, 2007)
158. K. H. Cho, Y. C. Jung, B. H. Hong, S. W. Hwang, J. H.Oh, D. Ahn, S. D. Suk, K. H. Y대, D. Park, W. S. Lee, "Observationof three-dimensional shell filling in cylindrical silicon nanowire singleelectron transistors," Appl. Phys. Lett. , vol. 90, p. 182102, 2007.
159. J. H. Oh, D. Ahn, J. S. Hwang, M. H. Son, and S. W.Hwang, "Calculation of the tunneling current and the noise for aradio-frequency single electron transistor based on a Green's function approach,"J. Korean Phys. Soc. , vol. 50, pp. 1869-1872, 2007.
160. D. Ahn and M. S. Kim, "Hawking-Unruh effect andthe entanglement of two-mode squeezed states in Riemannian space time,"Phys. Lett. A , vol. 366, pp. 202-205, 2007.
161. D. Ahn, "Wigner Rotation of a Spin 1/2 Particlenear the Event Horizon of a Schwarzschild Black Hole," J. Korean Phys.Soc., vol. 51, pp. 470-474, 2007.
162. Y. C. Jung, K. H. Cho, S. W. Hwang, D. Ahn, and Y. S.Yu, "Observation of gate bias dependent interface coupling in thinsilicon-on-insulator metal-oxide-semiconductor field-effect transistors,"J. Appl. Phys., vol. 102, p. 034509, 2007.
163. S. H. Lee, Y. S. Yu, S. W. Hwang, and D. Ahn,"Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE,"J. Nanoscience and Nanotechnology, vol. 7, p. 4089, 2007.
164. C. M. Park, S. Lee, M. S. Choi, M. G. Kang, Y. C. Jung,S. W. Hwang, D. Ahn, J. H. Lee, and C. R. Song, "Fabrication ofPoly-Silicon Nano-Wire Transistors on Plastic Substrates," J. Nanoscienceand Nanotechnology, vol. 7, p. 4150, 2007.
165. S. H. Lee, Y. S. Yu, H. J. Kim, S. W. Hwang, and D.Ahn, "Modeling of Semiconductor Nanowire Field Effect TransistorsConsidering Schottky Barrier Height Lowering," J. Korean Phys. Soc., vol.51, p. S298, 2007.
166. S.-H. Park, D. Ahn, and S. L. Chuang, "Electronicand Optical Properties of a- and m-Plane Wurtzite InGaN-GaN QuantumWells," IEEE J. Quantum Electron. vol. 43, pp. 1175-1182, 2007.
167. J. H. Oh, D. Ahn, Y. S. Yu, and S. W. Hwang, "Green-function approach totransport through a gate-surrounded Si nanowire with impurity scattering,"Phys. Rev. B , vol. 77, p. 035313, 2008.
168. Y. S. Yu, S. H. Lee, J. H. Oh, H. J KIm, S. W. Hwang, and D. Ahn. "Acompact analytical current conduction model for depletion-mode n-type nanowirefield-effect transistor (NWFET) with bottom-gate structure," SemiconductorSci. Technol. , vol. 23, p. 035025,2008.
169. H.-K Kim, J. S. Hwang, S. W. Hwang, and D. Ahn, "Faraday’s InductionExperiment in Nano-Transformers," IEEE Trans. Nanotechnol., vol. 7, pp. 120-123, 2008.
170. S. H. Hong, M.G. Kang, H.-Y. Cha, M. H. Son, J. S. Hwang, H. J. Lee, S. H. Sull, S. W. Hawng, D. Whang, and D. Ahn, "Fabrication ofone-dimensional devices by a combination of AC dielectrophoresisand electrochemical deposition," Nanotechnology, vol. 19, p. 105305, 2008.
171. S.-H. Park, D. Ahn and J.-G. Kim, "Optical gain inGaN/InGaAlN quantum well structures with internal field," Appl. Phys.Lett. , vol. 92, p. 171115, 2008.
172. S. H. Park, D. Ahn, and J. E. Oh, "Opticalanisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with ageneral crystal orientation," Appl. Phys. Lett., vol. 92, p. 011130, 2008.
173. J. S. Hwang, H. T. Kim, M. H. Son, J. H. Oh, S. W.Hwang, and D. Ahn, "Electronic transport properties of a single-wellcarbon nanotube field effect transistor with deoxyribonucleic acidconjugation," Physics E, vol. 40, pp.1115-1117, 2008.
174. J. H. Oh, D. Ahn, S. W. Hwang, J. S. Hwang, and M. H.Son, "Impurity scattering effects on transport through gate-all-aroundnanowires," Physica E, vol. 40, pp.1526-1529, 2008.
175. S. H. Son, M. G. Kang, S. W. Hwang, J. I. Lee, Y. J.Park, Y. S. Yu, and D. Ahn, "Hybrid integration of GaAs/AlGaAsin-plane-gate resonant tunneling and field effect transistors, "Physica E,vol. 40, pp. 2160-2162, 2008.
176. D. Ahn, Y. H. Moon, R. B. Mann and I. Fuentes-Schuller,“The black hole final state for the Dirac fields in Schwarzschild spacetime,”J. High Energy Phys. , vol. 06, p. 082, 2008.
177. D. Ahn and M. S. Kim, “Twist and teleportation analogyof the black hole final state,” Physical Review D, vol. 78, p. 064025, 2008.
178 S.-H. park , Y.Y. Lee and D. Ahn, “Intervalley splittings of Si quantum wells,” J. Appl. Phys.,vol. 104, p. 033703, 2008.
179. M.G. Kang, J. H. Lim, S. H. Hong, D. J. Lee, S. W. Hwang, D. Whang, J. S. Hwang,and D. Ahn, “Microwave characterization of a single wall carbon nanotube bundle,”Jpn. J. Appl. Phys., vol. 47, pp.4965-4968, 2008.
180. Y.C. Jung, K. H. Cho, B. H. Hong, S. H. Son, D. S. Kim, D. Whang, S. W Hwang, Y.S. Yu, and D. Ahn, “Fabrication and characterization of sidewall definedsilicon-on-insulator single-electron transistor,” IEEE Trans. Nanotechnol.,vol. 7, pp. 544-550, 2008.
181. Y.C. Jung, D. S. Kim, B. H. Hong, K. H. Cho, S. W. Hwang, D. Ahn, Y. S. Y, and B.H. Choi, “Fabrication of a double quantum dot structure,” J. Nanosci.Nanotechnol., vol. 8, pp. 5009-5013, 2008.
182. S.N. Ko, J. H. Bae, Y. Y. Lee, Y. H. Moon, J. H. Oh, and D. Ahn, “Effects ofconfinement on the valley splitting of Si quantum structures,” J. Korean Phys.Soc., vol. 53, pp. 3322-3327, 2008.
183. S.-H. Park, D. Ahn, and J.-W. Kim, “High-efficiency staggered 530 nmInGaN/InGaN/GaN quantum-well light-emitting diodes,” Appl. Phys. Lett., vol. 94, p. 041109, 2009.
184. S.-H. Park, and D. Ahn, “Internal field engineering in CdZnO/MgZnO quantum wellstructures,” Appl. Phys. Lett., vol. 94, p. 083507, 2009.
185. Y.S. Yu, J. H. Oh, H. T. Kim, Y. G. Kim, S. H. Son, B. H. Choi, S. W. Hwang, andD. Ahn, “Simulation method for transmission-type radio-frequencysingle-electron transistor (RF-SET) operation by SPICE,” Semicond. Sci.Technol., vol. 24, p. 025020, 2009.
186. J.S. Hwang, H. T. Kim, H. K. Kim, M. H. Son, S. W. Hwang, and D. Ahn, “Electricaltransport properties of a single wall carbon nanotube network,” Phys. StatusSolidi B, vol. 246, pp. 744-748, 2009.
187. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Internal efficiency of staggeredInGaN/InGaN quantum-well light-emitting diodes,” J. Korean Phys. Soc. , vol. 54,pp. 2464-2467, 2009.
188. J.S. Hwang, D. S. Kim, D. Ahn, and S. W. Hwang, “Transport properties of aDNA-conjugated single-wall carbon nanotube field-effect transistor,” Jpn. J.Appl. Phys., vol. 48, p. 06FD08, 2009.
189. J.S. Hwang, S. W. Hwang, and D. Ahn, “Electrical properties of lambdadeoxyribonucleic acid films.” J. Korean Phys. Soc., vol. 55, pp. 352-355, 2009.
190. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Dip-shaped InGaN/GaNquantum-well light-emitting diodes with high efficiency,” Appl. Phys. Lett.,vol. 95, p. 063507, 2009.
191. H.T. Kim, Y. K. Kim, S. H. Son, Y. S. Yu, D. Whang, D. Ahn, and S. W. Hwang, “Radiofrequency electrical pulse characterization of defect states in a GaAs/AlGaAsnarrow channel field effect transistor,” Semicond. Sci. Technol., vol. 24, p.085018, 2009.
192. S.H. Lee, Y. S. Yu, S. W. Hwang, and D. Ahn, “A SPICE-compatible new siliconnanowire field-effect transistors (SNWFETs) model,” IEEE Trans. Nanotechnol.,vol. 8, pp. 643-649, 2009.
193. Y.S. Yu, S. H. Lee, D. S. Kim, Y. C. Jung, S. W. Hwang and D. Ahn, “A bottom-gatedepletion-mode nanowire field effect transistor (NWFET) model including aSchottky diode model,” J. Korean Phys. Soc., vol. 55, pp. 1162-1166, 2009.
194. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Electronicand optical properties of staggered InGaN/InGaN quantum-well light-emittingdiodes,” Phys. Status Solidi A, vol. 206, pp. 2637-2640, 2009.
195 S.-H. Park,D. Ahn, B—H. Koo,and J. E. Oh, “Optical gain improvementin type-IIInGaN/GaNSb/GaN quantum well structures composed of InGaN and GaNSblayers,” Appl. Phys. Lett. , vol. 96, p. 051106, 2010.
196. S.-H. Park, D. Ahn, and B.-H. Koo, “Opticalgain characteristics in (1120)-oriented CdZnO/MgZnO quantum wells emitting at360-400 nm,” Semicond. Sci. Technol., vol. 25, p. 045016, 2010.
197. S.-H. Park, D. Ahn, B.-H. Koo, and J.-W. Kim, “Structural dependence of optical gainin dip-shaped InGaN/GaN quantum wells,“Semicond. Sci. Technol. , vol. 25, p. 095013,2010.
198. S.-H. Park, Y.-T. Moon, J.S. Lee, H. K. Kwon, J. S. Park and D. Ahn, “Enhancement of light power forstrain-compensated hybrid InGaN/InGaN/MaZnO light-emitting diodes,” Appl. Phys.Letts., vol. 97, p. 121107, 2010.
199. H. K. Kim, J. S. hwang, S.W. Hwang and D. Ahn, “Magnetic bead detection using nano-transformers,“Nanotechnology., vol. 21, p. 465501, 2010.
200. D. Ahn, “Effects of Black hole evaporation onthe quantum entangled state,” J. Korean Phys. Soc.,vol. 57, pp. 725-731, 2010.
201. S.-H. Park, Y.-T. Moon, J. S. Lee, H. K.Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of greenstrain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status SolidiA, vol. 208, pp. 195-198, 2011.
202. D. Ahn, “Calculation of permittivity tensorsfor invisibility devices by effective medium approach in general relativity,”J. Modern Opt., vol. 58, pp. 700-710, 2011.
203. J. H. Oh, D. Ahn and V. Bubanja,” Transporttheory of coupled quantum dots based on the auxiliary-operator method,” Phys.Rev. B, vol. 83, p. 205302, 2011.
204. J. H. Oh and D. Ahn, “Klein tunneling throughan oblique barrier in graphene ribbons, “ J. Korean Phys. Soc., vol. 59, pp.2786-2791, 2011.
205. J. Kim and D. Ahn, “Effectof indirect interband absorption in Ge/SiGe quantum wells, “ J. Appl. Phys.,vol. 110, p. 083119, 2011.
206. S.-H. Park, Y.-T. Moon,D.-S. Han, J. S. Park, M. S. Oh, and D. Ahn, “Light emission enhancement inblue InGaAlN/InGaN quantum well structures,” Appl. Phys. Lett., vol. 99, p. 181101, 2011.
207. Y. Y Lee and D. Ahn,“Dispersive finite-difference time-domain (FDTD) analysis of the elliptic cylindricalcloak,” J. Korean Phys. Soc., vol. 60, pp.1349-1360, 2012.
208. D. Ahn, “Black hole state evolution, finalstate and Hawking radiation,” Class. Quantum Grav., vol. 29, p. 224007, 2012.
209. D. Ahn and S.-H. Park,“Theory of non-polar and semi-polar nitride semiconductor quantum-wellstructures,” Semicond. Sci. Technol., vol. 27, p. 024011, 2012.
210. Y. Y. Lee and D. Ahn, “Dispersive full-wavefinite-difference time-domain analysis of the bipolar cylindrical cloak basedon the effective medium approach,” J. Opt. Soc. Am. B, vol. 30, pp. 140-148, 2013.
211. D. Ahn and S. L. Chuang,“High optical gain of I-VII semiconductor quantum wells for efficientlight-emitting devices,” Appl. Phys. Lett., vol 102, p. 121114, 2013.
212. S.-H. Park, W.-P. Hong andD. Ahn,” Crystal orientation effect on intersubband transition propertiesof (11n)-oriented ZnCdTe/ZnTe semiconductor quantum dots,”Physica B, vol. 420, pp. 36-39, 2013..
213. Y. Y. Lee and D. Ahn, ”Full-wavefinite-difference time-domain analysis of the invisibility cloak mapped to aline segment with isotropic complementary media,” J. Opt. Soc. Am. B, vol. 30, pp.2148-2156, 2013.
214. D. Ahn, C. R. Myers, T. C. Ralph and R. B.Mann, “Quantum state cloning in the presence of a closed timelike curve,” C. R.Myers.
215. S.-H. Park and D. Ahn, “Optical polarizationcharacteristics of m-plane InGaN/GaN quantum well structures and comparisonwith experiment,” Appl. Phys. Lett., vol. 103, p. 101107, 2013.
216. S.-H. Park and D. Ahn, “Optical emissioncharacteristics of pseudo polarization-matched green AlInGaN/InGaN quantum wellstructures, “ IEEE J. Selected Topics in Quantum Electron., vol. 19, p.1901308, 2013.
217. Y. Y. Lee, E. S. Kang, K. H. Jung, J. W. Leeand D. Ahn, “Elliptic cylindrical pseudo-optical black hole for omnidirectional lightabsorber,” E. S. Kang,
PATENTS
1. “Polarization tunable optoelectronicdevices,” U. S. Patent #5,079,774, filing date 12/27/90.
2. “Semiconductor laser made of group II-VIcompounds,” U.S. Patent #5,291,506, filing date 12/28/92(priority date 12/28/91, Korea).
3. “High-optical gain quantum-well semiconductorlaser,” U. S. Patent #5,345,461, filing date 11/13/92 (priority date 12/30/91,Korea).
4. “Tensile-strained blue-green II-VIquantum-well laser,” U. S. Patent #5,377,214, filing date 1/26/94 (priority date 1/26/93,Korea).
5. “Strained quantum-well semiconductor laserdiode,” U. S. Patent #5,410,562, filingdate 4/13/93 (priority date 4/13/92, Korea).
6. “Infraredphotodector using delta-doped semiconductors,” US Patent #5,757,025, May 26, 1998.
7. “Universal quantum gate,:” US Patent#7,655,850 B1, February 2, 2010.
8. “Nanometer scale magnetization,” US Patent # 8,004,793, Agust 23, 2011.
9. “Polariton mode optical switch,” US Patent # 8,063,396, November 22, 2011.
10. “Copper blend I-VIIcompound semiconductor light-emitting devices,” US Patent # 8,058,641,November 15, 2011.
11. “Optoelectronic devices,” US Patent #8,054,862, November 8, 2011
12. “Magnetic resonancecompatible magnetic field detection, based on diffuse reflectance ofnano-magnet sets,” US Patent #8, 289,022, October 16, 2012.
13. “Detection ofmagnetic fields using nano-magnets,” US Patent #8,264224, September 11, 2012.
14. “Semiconductordevice having strong excitonic binding,” US Patent #8,253,145, August 28, 2012.
15. “Photodiodes withsurface plasmon couplers,” US Patent #8,247,881, August 21, 2012.
16. “Photodetectorcapable of detecting the visible light spectrum,” #8,227,793, July 24, 2012.
17. “Nanometer scale magnetization,”US Patent #8,223,457, July 17, 2012.
18. “PhotovoltaicDevices,” US Patent #8,106,421, January 31, 2012.
19. “PiezoelectricActuators,” US Patent #8,097,999, January 17, 2012.
20. “Method ofdetermining compound ratio of compound semiconductor for light generatingdevice,” US Patent #8, 178, 375, May 15, 2012.
21. “Photodetectorcapable of detecting long wavelength radiation, Japanese Patent #5,374,643, September27, 2013.
22. “Compoundsemiconductors,” US Patent #8,395,141, March 12, 2013.
23. “Semiconductordevice,” US Patent # 8,368,047, February 5, 2013.
24. “Photodetectors,” USpatent #8,373,153, February 12, 2013.
25. “Polariton modeoptical switch with composite structure,” US Patent # 8,368,990, February 5,2013.
26. “Light-electricityconversion device,” US Patent #8,367,925, February 5, 2013.
27. “Quantum Karnaughmap,” US patent, #8,671,369, March 11, 2014.
28. “Polarton modeoptical switch with composite structure,” US Patent, #8,681,411, March 25, 2014
29. “Copper blend I-VIIcompound semiconductor light-emitting devices,” US patent, #8,524,517,September 3, 2013.
30. “Coupled asymmetricquantum confinement structure,” US Patent, #8,558,257, October 15, 2013.
31. “Health monitoringsystem with a waveguide to a wave from a power source,” US Patent, #8,708,901,April 29, 2014.
32. “Coupled asymmetricquantum confinement structure,” US Patent, #8,704248, April 22, 2014.
33. “Quantum Karnaughmap,” Japanese Patent, #5,537,669, May 9, 2014.
34. “Coupled asymmetricquantum confinement structures,” US Patent 8,828,764, September 9, 2014.
35. “Photodetectorcapable of detecting long wavelength radiation,” US Patent 8, 809, 834, August19, 2014.
36. “Phtodetectorcapable of detecting the visible light spectrum,” US patent 8, 802, 481, August12, 2014.
37. “Compoundsemiconductors,” US Patent 8, 748, 862, June 10, 2014.
Awards, Fellowship and Honors
American Physical Society Fellow (Class of 2009)
IEEE Fellow (Class of 2005)
RossJ. Martin award for Excellence in Research from the Univ. ofIllinois (1988)
Robert T. Chien MemorialAward from the Univ. of Illinois (1988)
GTE Fellowship at the University of Illinois (1986 - 1988)
Korean GovernmentScholarship (1985 - 1988)
Creative Research Initiative Grant On Quantum Information from Ministry of Science and Technology (1998-2010)
Gloabl Frontier (2014~ present)
Academic Courses Taught
Engineering Mathematics I & II: Undergraduate
Semiconductor Physics: Undergraduate
Applied Quantum Mechanics: Graduate
Quantum Information: Graduate
Quantum Computation: Graduate
Applied Mathamatics: Graduate
Special Tpoics in Quantum Electronics (Differential Geometry & General Relativity): Graduate
Professional Membership
IEEE
American Physical Society
Tau Beta Pi
Phi Kappa Phi
American Physical Society Fellow (Class of 2009)
IEEE Fellow (Class of 2005)
RossJ. Martin award for Excellence in Research from the Univ. ofIllinois (1988)
Robert T. Chien MemorialAward from the Univ. of Illinois (1988)
GTE Fellowship at the University of Illinois (1986 - 1988)
Korean GovernmentScholarship (1985 - 1988)
Creative Research Initiative Grant On Quantum Information from Ministry of Science and Technology (1998-2010)
Gloabl Frontier (2014~ present)
Academic Courses Taught
Engineering Mathematics I & II: Undergraduate
Semiconductor Physics: Undergraduate
Applied Quantum Mechanics: Graduate
Quantum Information: Graduate
Quantum Computation: Graduate
Applied Mathamatics: Graduate
Special Tpoics in Quantum Electronics (Differential Geometry & General Relativity): Graduate
Professional Membership
IEEE
American Physical Society
Tau Beta Pi
Phi Kappa Phi
